Scifo Lorette, Dubois Mathieu, Brun Micka Euml L, Rannou Patrice, Latil Sylvain, Rubio Angel, Grévin Benjamin
UMR5819 (CEA-CNRS-Université Grenoble I), CEA/DRFMC/SPrAM/LEMOH, 17 rue des Martyrs, 38054 Grenoble Cedex 9, France.
Nano Lett. 2006 Aug;6(8):1711-8. doi: 10.1021/nl061018w.
Regioregular poly(3-dodecylthiophene) films self-organized on highly oriented pyrolytic graphite have been investigated by scanning tunneling microscopy and two-dimensional scanning tunneling spectroscopy (STS). Simulated spectra in very good agreement with the experimental data have been obtained by a method combining ab initio and semiempirical approaches, which allows a careful discussion of the polymer electronic states. From the experimental data, with the support of modeling, it is shown that the STS spectra give a direct access to the polymer semiconducting band gap without noticeable charge-transfer effects from the substrate. Spectroscopic images are achieved at the single chain scale, which allows scrutinizing the electronic consequences of chain folds and pi-stacking effects through spectroscopic contrasts. While chain folds do not locally increase the polymer band gap more than a few tens of millielectonvolt, a striking widening of the STS conductance gap is observed in the case of electronic tunneling through two interacting polymer layers. Scenarios based on nonplanar configuration of thiophene cycles within the second layer or variations of the charge screening effects are proposed to explain this phenomenon.
通过扫描隧道显微镜和二维扫描隧道谱(STS)对在高度取向热解石墨上自组装的区域规整聚(3-十二烷基噻吩)薄膜进行了研究。通过将从头算和半经验方法相结合的方法获得了与实验数据非常吻合的模拟光谱,这使得能够仔细讨论聚合物的电子态。从实验数据出发,在建模的支持下,结果表明,STS光谱可直接获取聚合物的半导体带隙,而不会受到来自基底的明显电荷转移效应的影响。在单链尺度上获得了光谱图像,这使得能够通过光谱对比来仔细研究链折叠和π堆积效应的电子后果。虽然链折叠不会使聚合物带隙局部增加超过几十毫电子伏特,但在电子隧穿通过两个相互作用的聚合物层的情况下,观察到STS电导隙显著变宽。提出了基于第二层中噻吩环的非平面构型或电荷屏蔽效应变化的方案来解释这一现象。