Monllor-Satoca Damián, Borja Luis, Rodes Antonio, Gómez Roberto, Salvador Pedro
Departament de Química Física i Institut Universitari d'Electroquímica, Universitat d'Alacant, Ap. 99, 03080 Alacant, Spain.
Chemphyschem. 2006 Dec 11;7(12):2540-51. doi: 10.1002/cphc.200600379.
Nanostructured tungsten trioxide thin-film electrodes are prepared on conducting glass substrates by either potentiostatic electrodeposition from aqueous solutions of peroxotungstic acid or direct deposition of WO3 slurries. Once treated thermally in air at 450 degrees C, the electrodes are found to be composed of monoclinic WO3 grains with a particle size around 30-40 nm. The photoelectrochemical behavior of these electrodes in 1 M HClO4 apparently reveals a low degree of electron-hole recombination. Upon addition of formic acid, the electrode showed the current multiplication phenomenon together with a shift of the photocurrent onset potential toward less positive values. Photoelectrochemical experiments devised on the basis of a kinetic model reported recently [I. Mora-Seró, T. Lana-Villarreal, J. Bisquert, A. Pitarch, R. Gómez, P. Salvador, J. Phys. Chem. B 2005, 109, 3371] showed that an interfacial mechanism of inelastic, direct hole transfer takes place in the photooxidation of formic acid. This behavior is attributed to the tendency of formic acid molecules to be specifically adsorbed on the WO3 nanoparticles, as evidenced by attenuated total reflection infrared spectroscopy.
通过过氧钨酸水溶液的恒电位电沉积或WO₃浆料的直接沉积,在导电玻璃基板上制备了纳米结构的三氧化钨薄膜电极。在450℃空气中进行热处理后,发现电极由粒径约为30 - 40nm的单斜晶系WO₃晶粒组成。这些电极在1M高氯酸中的光电化学行为明显显示出低程度的电子 - 空穴复合。加入甲酸后,电极显示出电流倍增现象,同时光电流起始电位向更正的值移动。基于最近报道的动力学模型[I. Mora-Seró, T. Lana-Villarreal, J. Bisquert, A. Pitarch, R. Gómez, P. Salvador, J. Phys. Chem. B 2005, 109, 3371]设计的光电化学实验表明,在甲酸的光氧化过程中发生了非弹性直接空穴转移的界面机制。衰减全反射红外光谱证明,这种行为归因于甲酸分子特异性吸附在WO₃纳米颗粒上的趋势。