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结构域III S4段中的中心带电荷残基调节骨骼肌钠通道的失活门控。

Central charged residues in DIIIS4 regulate deactivation gating in skeletal muscle sodium channels.

作者信息

Groome James R, Alexander Heidi M, Fujimoto Esther, Sherry Megan, Petty David

机构信息

Department of Biological Sciences, Idaho State University, Pocatello, ID 83204, USA.

出版信息

Cell Mol Neurobiol. 2007 Feb;27(1):87-106. doi: 10.1007/s10571-006-9120-2. Epub 2006 Dec 7.

Abstract
  1. Mutations in the S4 segment of domain III in the voltage gated skeletal muscle sodium channel hNa(V)1.4 were constructed to test the roles of each charged residue in deactivation gating. Mutations comprised charge reversals at K1-R6, charge neutralization, and substitution at R4 and R5. 2. Charge-reversing mutations at R4 and R5 produced the greatest alteration of activation parameters compared to hNa(V)1.4. Effects included depolarization of the conductance/voltage (g/V) curve, decreased valence and slowing of kinetics. 3. Reversal of charge at R2 to R4 hyperpolarized, and reversal at R5 or R6 depolarized the h (infinity) curve. Most DIIIS4 mutations slowed inactivation from the open state. R4E slowed closed state fast inactivation and R5E inhibited its completion .4. Deactivation from the open and/or inactivated state was prolonged in mutations reversing charge at R2 to R4 but accelerated by reversal of charge at R5 or R6. Effects were most pronounced at central charges R4 and R5. 5. Charge and structure each contribute to effects of mutations at R4 and R5 on channel gating. Effects of mutations on activation and deactivation at R4 and, to a lesser extent R5, were primarily owing to charge alteration, whereas effects on fast inactivation were charge independent.
摘要
  1. 构建电压门控骨骼肌钠通道hNa(V)1.4结构域III的S4片段中的突变,以测试每个带电残基在失活门控中的作用。突变包括K1 - R6处的电荷反转、电荷中和以及R4和R5处的取代。2. 与hNa(V)1.4相比,R4和R5处的电荷反转突变对激活参数产生了最大的改变。影响包括电导/电压(g/V)曲线的去极化、价态降低和动力学减慢。3. R2至R4处的电荷反转使h(无穷大)曲线超极化,而R5或R6处的电荷反转使其去极化。大多数DIIIS4突变减缓了开放状态的失活。R4E减缓了关闭状态的快速失活,R5E抑制了其完成。4. 从开放和/或失活状态的失活在R2至R4处的电荷反转突变中延长,但在R5或R6处的电荷反转中加速。在中心电荷R4和R5处影响最为明显。5. 电荷和结构都对R4和R5处的突变对通道门控的影响有贡献。R4处突变对激活和失活的影响,以及在较小程度上R5处的影响,主要归因于电荷改变,而对快速失活的影响与电荷无关。

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