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小分子在氧化铟锡表面的化学吸附:提高探针分子的电子转移速率及有机发光二极管的性能。

Small molecule chemisorption on indium-tin oxide surfaces: enhancing probe molecule electron-transfer rates and the performance of organic light-emitting diodes.

作者信息

Carter Chet, Brumbach Michael, Donley Carrie, Hreha Richard D, Marder Seth R, Domercq Benoit, Yoo SeungHyup, Kippelen Bernard, Armstrong Neal R

机构信息

Department of Chemistry, University of Arizona, Tucson, Arizona 85721, USA.

出版信息

J Phys Chem B. 2006 Dec 21;110(50):25191-202. doi: 10.1021/jp064061g.

Abstract

Indium-tin oxide (ITO) surfaces have been modified by chemisorption of carboxylic acid functionalized small molecules: ferrocene dicarboxylic acid (1), 3-thiophene acetic acid (2), and 6-{4-[{4'-[[4-(5-carboxy-pentyloxy)-phenyl]-(4-methoxy-phenyl)-amino]-biphenyl-4-yl}-(4-methoxy-phenyl)-amino]-phenoxy}-hexanoic acid (p-OMe)2-TPD-(C5-COOH)2) (3). Voltammetrically determined surface coverages of 1-3 increased in two stages, the first stage completing in minutes, the latter stage taking several hours. Electron-transfer rate coefficients, kS, for the probe molecule ferrocene in acetonitrile likewise increased in two stages with increasing surface coverages of 1, 2, and 3. Fourier transform infrared spectroscopy of In2O3 powders, exposed for long periods to ethanol solutions of each modifier, confirmed the formation of indium oxalate-like surface species. X-ray photoelectron spectroscopy of carboxy-terminated alkanethiol-modified gold surfaces, exposed to these same In2O3(powder)/small molecule modifier solutions, showed the capture of trace levels of indium as a result of the chemisorption of these small molecules, suggesting that slow etching of the ITO surface also occurs during the chemisorption event. Conventional aluminum quinolate/bis-triarylamine organic light-emitting diodes (OLEDs) created on ITO surfaces modified with 1, 2, and 3, with and without an overlayer of PEDOT:PSS (a poly(thiophene)/poly(stryenesulfonate) ITO modifier), showed leakage currents lowered by several orders of magnitude and an increase in OLED device efficiency.

摘要

通过羧酸官能化小分子的化学吸附对氧化铟锡(ITO)表面进行了改性:二茂铁二甲酸(1)、3-噻吩乙酸(2)和6-{4-[{4'-[[4-(5-羧基戊氧基)-苯基]-(4-甲氧基苯基)-氨基]-联苯-4-基}-(4-甲氧基苯基)-氨基]-苯氧基}-己酸((p-OMe)2-TPD-(C5-COOH)2)(3)。通过伏安法测定的1-3的表面覆盖率分两个阶段增加,第一阶段在几分钟内完成,后一阶段需要几个小时。乙腈中探针分子二茂铁的电子转移速率系数kS同样随着1、2和3表面覆盖率的增加分两个阶段增加。将In2O3粉末长时间暴露于每种改性剂的乙醇溶液中,傅里叶变换红外光谱证实形成了草酸铟类表面物种。将羧基封端的链烷硫醇改性的金表面暴露于这些相同的In2O3(粉末)/小分子改性剂溶液中,X射线光电子能谱显示由于这些小分子的化学吸附而捕获了痕量铟,这表明在化学吸附过程中ITO表面也发生了缓慢蚀刻。在使用1、2和3改性的ITO表面上制备的传统喹啉酸铝/双三芳基胺有机发光二极管(OLED),无论有无PEDOT:PSS(一种聚噻吩/聚苯乙烯磺酸盐ITO改性剂)覆盖层,其漏电流降低了几个数量级,并且OLED器件效率提高。

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