具有化学修饰底部电极的高性能低成本有机场效应晶体管。

High-performance low-cost organic field-effect transistors with chemically modified bottom electrodes.

作者信息

Di Chong-an, Yu Gui, Liu Yunqi, Xu Xinjun, Wei Dacheng, Song Yabin, Sun Yanming, Wang Ying, Zhu Daoben, Liu Jian, Liu Xinyu, Wu Dexin

机构信息

Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100080, P.R. China.

出版信息

J Am Chem Soc. 2006 Dec 27;128(51):16418-9. doi: 10.1021/ja066092v.

DOI:10.1021/ja066092v

PMID:17177348

Abstract

The characteristics of organic field-effect transistors (OFETs) were dramatically improved by chemically modifying the surface of the bottom-contact Ag or Cu source-drain (D-S) electrodes with a simple solution method. The contact resistance and energetic mismatch typically observed with Ag D-S electrodes in pentacene bottom-contact OFETs can be properly eliminated when modified by the Ag-TCNQ (TCNQ = 7,7,8,8-tetracyanoquinodimethane). The pentacene transistors with low-cost Ag-TCNQ-modified Ag bottom-contact electrodes exhibit outstanding electrical properties, which are comparable with that of the Au top-contact devices. It thus provides a novel way toward high-performance low-cost bottom-contact OFETs.

摘要

通过一种简单的溶液法对底部接触的银或铜源漏（D-S）电极表面进行化学修饰，有机场效应晶体管（OFET）的性能得到了显著改善。在用Ag-TCNQ（TCNQ = 7,7,8,8-四氰基对苯二醌二甲烷）修饰时，在并五苯底部接触OFET中通常观察到的与银D-S电极相关的接触电阻和能量失配可以得到适当消除。具有低成本Ag-TCNQ修饰的银底部接触电极的并五苯晶体管表现出优异的电学性能，与金顶部接触器件相当。因此，它为高性能低成本底部接触OFET提供了一种新方法。