用于可调谐应用的KTa0.6Nb0.4O3铁电薄膜在微波频率下的行为
KTa0.6Nb0.4O3 ferroelectric thin film behavior at microwave frequencies for tunable applications.
作者信息
Laur Vincent, Rousseau Anthony, Tanné Gérard, Laurent Paul, Députier Stéphanie, Guilloux-Viry Maryline, Huret Fabrice
机构信息
LEST-UBO/ENSTBr, UMR CNRS 6165, 29238 Brest, France.
出版信息
IEEE Trans Ultrason Ferroelectr Freq Control. 2006 Dec;53(12):2280-6. doi: 10.1109/tuffc.2006.174.
In this study about the relationships between structural and microwave electrical properties of KTa(1-x)NbxO3 (KTN) ferroelectric materials, a KTN thin film was deposited on different substrates to investigate how KTN growth affects the microwave behavior. Interdigital capacitors and stubs were made on these films through a simple engraving process. Microwave measurements under a static electric field showed the importance of the substrate on the circuit behavior and, notably, on the tuning factor.
在这项关于钽铌酸钾（KTN）铁电材料的结构与微波电学性质之间关系的研究中，在不同衬底上沉积了一层KTN薄膜，以研究KTN的生长如何影响微波行为。通过简单的刻蚀工艺在这些薄膜上制作了叉指电容器和短截线。在静电场下的微波测量表明了衬底对电路行为的重要性，尤其是对调谐因子的重要性。
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