Laubach Stefan, Schmidt Peter C, Thissen Andreas, Fernandez-Madrigal Francisco Javier, Wu Qi-Hui, Jaegermann Wolfram, Klemm Matthias, Horn Siegfried
Eduard-Zintl-Institut für Anorganische und Physikalische Chemie, Technische Universität Darmstadt, Petersenstrasse 21, D-64287 Darmstadt, Germany.
Phys Chem Chem Phys. 2007 May 28;9(20):2564-76. doi: 10.1039/b612489e. Epub 2007 Mar 21.
In this work the electronic structure of V(2)O(5), reduced V(2)O(5-x) (V(16)O(39)) and sodium intercalated NaV(2)O(5) has been studied by both theoretical and experimental methods. Theoretical band structure calculations have been performed using density functional methods (DFT). We have investigated the electron density distribution of the valence states, the total density of states (total DOS) and the partial valence band density of states (PVBDOS). Experimentally, amorphous V(2)O(5) thin films have been prepared by physical vapour deposition (PVD) on freshly cleaved highly oriented pyrolytic graphite (HOPG) substrates at room temperature with an initial oxygen understoichiometry of about 4%, resulting in a net stoichiometry of V(2)O(4.8). These films have been intercalated by sodium using vacuum deposition with subsequent spontaneous intercalation (NaV(2)O(5)) at room temperature. Resonant V3p-V3d photoelectron spectroscopy (ResPES) experiments have been performed to determine the PVBDOS focusing on the calculation of occupation numbers and the determination of effective oxidation state, reflecting ionicity and covalency of the V-O bonds. Using X-ray absorption near edge spectra (XANES) an attempt is made to visualize the changes in the unoccupied DOS due to sodium intercalation. For comparison measurements on nearly stoichiometric V(2)O(5) single crystals have been performed. The experimental data for the freshly cleaved and only marginally reduced V(2)O(5) single crystals and the NaV(2)O(5) results are in good agreement with the calculated values. The ResPES results for V(2)O(4.8) agree in principle with the calculations, but the trends in the change of the ionicity differ between experiment and theory. Experimentally we find partly occupied V 3d states above the oxygen 2p-like states and a band gap between these and the unoccupied states. In theory one finds this occupation scheme assuming oxygen vacancies in V(2)O(5) and by performing a spin-polarized calculation of an antiferromagnetic ordered NaV(2)O(5.).
在这项工作中,通过理论和实验方法研究了V₂O₅、还原的V₂O₅₋ₓ(V₁₆O₃₉)和钠插层的NaV₂O₅的电子结构。使用密度泛函方法(DFT)进行了理论能带结构计算。我们研究了价态的电子密度分布、总态密度(总DOS)和部分价带态密度(PVBDOS)。实验上,通过物理气相沉积(PVD)在室温下在新鲜劈裂的高度取向热解石墨(HOPG)衬底上制备了非晶态V₂O₅薄膜,初始氧化学计量比不足约4%,得到V₂O₄.₈的净化学计量比。这些薄膜在室温下通过真空沉积随后自发插层(NaV₂O₅)进行了钠插层。进行了共振V3p - V3d光电子能谱(ResPES)实验,以确定PVBDOS,重点是计算占据数和确定有效氧化态,反映V - O键的离子性和共价性。使用X射线吸收近边光谱(XANES)试图可视化由于钠插层导致的未占据DOS的变化。为了进行比较,对接近化学计量比的V₂O₅单晶进行了测量。新鲜劈裂且仅轻微还原的V₂O₅单晶的实验数据以及NaV₂O₅的结果与计算值吻合良好。V₂O₄.₈的ResPES结果原则上与计算结果一致,但离子性变化趋势在实验和理论之间存在差异。实验上,我们发现在类氧2p态之上有部分占据的V 3d态,并且在这些态与未占据态之间存在带隙。理论上,通过假设V₂O₅中的氧空位并对反铁磁有序的NaV₂O₅进行自旋极化计算可以得到这种占据方案。