Jiajie Long, Nagaosa Yukio
Department of Applied Chemistry and Biotechnology, Graduate School of Engineering, University of Fukui, Bunkyo Fukui 910-8507, Japan.
Anal Chim Acta. 2007 Jun 12;593(1):1-6. doi: 10.1016/j.aca.2007.04.052. Epub 2007 May 1.
A highly sensitive method has been developed for the determination of trace As(III) by a square wave cathodic stripping voltammetry employing in situ plated bismuth-film on edge-plane graphite substrate as working electrode. The presence of As(III) enhanced a cathodic peak corresponding to the catalytic hydrogen wave due to Se(IV) at about -1150 mV. Linear calibration curves for As(III) determination were obtained over the concentration ranges of 0.01-1.0 microg L(-1) and 1.0-12.0 microg L(-1) at deposition times of 30 s and 10 s, respectively. The detection limit (3sigma) was estimated to be as low as 0.7 ng L(-1) As(III) at 30 s deposition time. The optimum experimental parameters and probable interference from foreign ions and organic compounds were investigated. This proposed method could be applied to analyses of certified reference material, synthetic and natural water samples.
已开发出一种高灵敏度方法，用于通过方波阴极溶出伏安法测定痕量As(III)，该方法采用在边缘平面石墨基底上原位镀铋膜作为工作电极。As(III)的存在增强了对应于约-1150 mV处Se(IV)催化氢波的阴极峰。在沉积时间分别为30 s和10 s时，As(III)测定的线性校准曲线在0.01 - 1.0 μg L(-1)和1.0 - 12.0 μg L(-1)浓度范围内获得。在30 s沉积时间下，检测限(3σ)估计低至0.7 ng L(-1) As(III)。研究了最佳实验参数以及外来离子和有机化合物可能产生的干扰。该方法可应用于有证标准物质、合成水样和天然水样的分析。
