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发光二极管中基于镧系元素的发光材料。

Lanthanide-based emitting materials in light-emitting diodes.

作者信息

de Bettencourt-Dias Ana

机构信息

Department of Chemistry, University of Nevada, Reno, NV 89557, USA.

出版信息

Dalton Trans. 2007 Jun 14(22):2229-41. doi: 10.1039/b702341c. Epub 2007 May 11.

DOI:10.1039/b702341c
PMID:17534483
Abstract

Since the description of efficient electroluminescence from aluminium tris(hydroxyquinoline) in the mid 1980s, interest in new complexes and polymers with luminescence properties as emitting layers in light-emitting diodes has steadily increased. Recently, Ln(III) ion complexes have gained in importance for this type of application. Here we review some of the seminal work in the area, along with new developments in the field. The photophysical characterization of complexes of lanthanide ions both in solution and in the solid state allows the determination of which of the complexes might be successfully utilized as emitting layers in light-emitting diodes for display applications. However, the architecture of the device is also of major importance, to allow for good charge transport and recombination and thus obtain pure colors and high emission quantum efficiency.

摘要

自20世纪80年代中期对三(羟基喹啉)铝的高效电致发光进行描述以来,对具有发光特性的新型配合物和聚合物作为发光二极管发光层的兴趣稳步增长。最近,Ln(III)离子配合物在这类应用中变得越来越重要。在此,我们回顾该领域的一些开创性工作以及该领域的新进展。镧系离子配合物在溶液和固态中的光物理表征有助于确定哪些配合物可成功用作显示应用发光二极管的发光层。然而,器件的结构也至关重要,以实现良好的电荷传输和复合,从而获得纯色和高发射量子效率。

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