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气相生长烷烃薄膜的原位X射线反射率研究

In-situ X-ray reflectivity study of alkane films grown from the vapor phase.

作者信息

Basu S, Satija S K

机构信息

National Institute for Standards and Technology, Gaithersburg, Maryland 20899, USA.

出版信息

Langmuir. 2007 Jul 31;23(16):8331-5. doi: 10.1021/la062517f. Epub 2007 Jun 30.

Abstract

We carried out in-situ X-ray reflectivity study of nine n-alkane chains (CnH2n+2) on Si substrate, n in the range of 17-30. These films formed under vacuum at equilibrium vapor pressure of the respective alkane molecule. For all the alkanes studied we found a bilayer structure on the substrate, a higher density vertical layer at the air-film interface with the layer thickness equal to the all-trans length of the respective molecule, and a lower density layer below it with the molecules lying horizontal on the substrate. This model was earlier proposed for C32 films on Si by Volkmann et al.11 We observe that this model can fit the entire range of data from C17 to C30 in our experiments.

摘要

我们对硅衬底上的九条正构烷烃链(CnH2n+2)进行了原位X射线反射率研究,其中n的范围为17至30。这些薄膜是在各自烷烃分子的平衡蒸气压下于真空中形成的。对于所有研究的烷烃,我们在衬底上发现了一种双层结构,在气-膜界面处有一个密度较高的垂直层,其层厚度等于相应分子的全反式长度,在其下方有一个密度较低的层,分子在衬底上呈水平排列。该模型早些时候由Volkmann等人针对硅上的C32薄膜提出。我们观察到,在我们的实验中,该模型能够拟合从C17到C30的整个数据范围。

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