Kumar Pramoda, Patil Shivaram N, Hiremath Uma S, Krishnamurthy K S
Centre for Liquid Crystal Research, P. O. Box 1329, Jalahalli, Bangalore 560013, India.
J Phys Chem B. 2007 Aug 2;111(30):8792-800. doi: 10.1021/jp072686o. Epub 2007 Jul 6.
We characterize the sequence of bifurcations generated by ac fields in a nematic layer held between unidirectionally rubbed ITO electrodes. The material, which possesses a negative dielectric anisotropy epsilona and an inversion temperature for electrical conductivity anisotropy sigmaa, exhibits a monostable tilted alignment near TIN, the isotropic-nematic point. On cooling, an anchoring transition to the homeotropic configuration occurs close to the underlying smectic phase. The field experiments are performed for (i) negative sigmaa and homeotropic alignment, and (ii) weakly positive sigmaa and nearly homeotropic alignment. Under ac driving, the Freedericksz transition is followed by bifurcation into various patterned states. Among them are the striped states that seem to belong to the dielectric regime and localized hybrid instabilities. Very significantly, the patterned instabilities are not excited by dc fields, indicating their possible gradient flexoelectric origin. The Carr-Helfrich mechanism-based theories that take account of flexoelectric terms can explain the observed electroconvective effects only in part.
我们描述了在单向摩擦的氧化铟锡(ITO)电极之间的向列层中,交流场产生的一系列分岔现象。该材料具有负介电各向异性εa和电导率各向异性σa的转变温度,在各向同性-向列相转变点TIN附近呈现单稳态倾斜排列。冷却时,在接近底层近晶相处会发生向垂面构型的锚定转变。场实验针对以下两种情况进行:(i)负σa和垂面排列,以及(ii)弱正σa和近乎垂面排列。在交流驱动下,弗雷德里克斯转变之后会分岔为各种图案化状态。其中包括似乎属于介电区域的条纹状态和局域混合不稳定性。非常重要的是,图案化不稳定性不会被直流场激发,这表明它们可能源于梯度挠曲电效应。基于卡尔-赫尔弗里希机制且考虑了挠曲电项的理论只能部分解释所观察到的电对流效应。