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对二氯化锡的从头算计算及其ã-X和B-X吸收以及单振动能级发射光谱的弗兰克-康登因子模拟。

Ab initio calculations on SnCl2 and Franck-Condon factor simulations of its ã-X and B-X absorption and single-vibronic-level emission spectra.

作者信息

Lee Edmond P F, Dyke John M, Mok Daniel K W, Chow Wan-ki, Chau Foo-tim

机构信息

Department of Building Services Engineering, Hong Kong Polytechnic University, Hung Hom, Hong Kong.

出版信息

J Chem Phys. 2007 Jul 14;127(2):024308. doi: 10.1063/1.2749508.

Abstract

Minimum-energy geometries, harmonic vibrational frequencies, and relative electronic energies of some low-lying singlet and triplet electronic states of stannous dichloride, SnCl(2), have been computed employing the complete-active-space self-consistent-field/multireference configuration interaction (CASSCF/MRCI) and/or restricted-spin coupled-cluster single-double plus perturbative triple excitations [RCCSD(T)] methods. The small core relativistic effective core potential, ECP28MDF, was used for Sn in these calculations, together with valence basis sets of up to augmented correlation-consistent polarized-valence quintuple-zeta (aug-cc-pV5Z) quality. Effects of outer core electron correlation on computed geometrical parameters have been investigated, and contributions of off-diagonal spin-orbit interaction to relative electronic energies have been calculated. In addition, RCCSD(T) or CASSCF/MRCI potential energy functions of the X(1)A(1), ã(3)B(1), and B(1)B(1) states of SnCl(2) have been computed and used to calculate anharmonic vibrational wave functions of these three electronic states. Franck-Condon factors between the X (1)A(1) state, and the ã (3)B(1) and B (1)B(1) states of SnCl(2), which include anharmonicity and Duschinsky rotation, were then computed, and used to simulate the ã-X and B-X absorption and corresponding single-vibronic-level emission spectra of SnCl(2) which are yet to be recorded. It is anticipated that these simulated spectra will assist spectroscopic identification of gaseous SnCl(2) in the laboratory and/or will be valuable in in situ monitoring of SnCl(2) in the chemical vapor deposition of SnO(2) thin films in the semiconductor gas sensor industry by laser induced fluorescence and/or ultraviolet absorption spectroscopy, when a chloride-containing tin compound, such as tin dichloride or dimethyldichlorotin, is used as the tin precursor.

摘要

利用完全活性空间自洽场/多参考组态相互作用(CASSCF/MRCI)和/或限制自旋耦合簇单双激发加微扰三重激发[RCCSD(T)]方法,计算了二氯化锡(SnCl₂)一些低激发单重态和三重态电子态的最低能量几何结构、谐振动频率和相对电子能量。在这些计算中,对Sn使用了小核相对论有效核势ECP28MDF,以及高达增强相关一致极化价层五重zeta(aug-cc-pV5Z)质量的价基组。研究了外层电子相关对计算几何参数的影响,并计算了非对角自旋轨道相互作用对相对电子能量的贡献。此外,还计算了SnCl₂的X¹A₁、ã³B₁和B¹B₁态的RCCSD(T)或CASSCF/MRCI势能函数,并用于计算这三个电子态的非谐振动波函数。然后计算了SnCl₂的X¹A₁态与ã³B₁和B¹B₁态之间包括非谐性和杜什金斯基转动的弗兰克-康登因子,并用于模拟SnCl₂尚未记录的ã-X和B-X吸收以及相应的单振动能级发射光谱。预计这些模拟光谱将有助于在实验室中对气态SnCl₂进行光谱鉴定,和/或在半导体气体传感器行业中,当使用含氯锡化合物(如二氯化锡或二甲基二氯化锡)作为锡前驱体通过激光诱导荧光和/或紫外吸收光谱对SnO₂薄膜化学气相沉积中的SnCl₂进行原位监测时具有重要价值。

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