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磷酸二氢铵的生长层。

Growth Layers on Ammonium Dihydrogen Phosphate.

出版信息

Science. 1965 May 14;148(3672):952-4. doi: 10.1126/science.148.3672.952.

Abstract

Microscopic observations of growth layers and etch pits on ammonium dihydrogen phosphate crystals reveal screw dislocations on the {100} face generating elliptical spirals that change rapidly but reversibly to rectangular shape when chromium-ion impurity is added. The effects of the impurity on crystal habit are judged to be secondary to changes in the morphology of the growth layers. No sources of growth are observed on the {101} faces; the layers spread inward from the edges and at times are mutually annihilating so that, temporarily, no steps are observed. Similar behavior is recorded for the {1011} faces of NaNO(3).

摘要

对磷酸二氢铵晶体生长层和腐蚀坑的微观观察表明,{100}面上的螺旋位错产生了椭圆形螺旋,当加入铬离子杂质时,这些螺旋迅速但可逆转地变为矩形。杂质对晶体形态的影响被判断为次于生长层形态的变化。在{101}面上没有观察到生长源;这些层从边缘向内扩展,有时会相互消灭,因此暂时没有观察到台阶。类似的行为也记录在 NaNO(3)的{1011}面上。

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