Knittle E, Jeanloz R
Science. 1984 Jan 6;223(4631):53-6. doi: 10.1126/science.223.4631.53.
Cesium iodide, a simple ionic salt at low pressures, undergoes a second-order transformation at 40 gigapascals (400 kilobars) from the cubic B2 (cesium chloride-type) structure to the body-centered tetragonal structure. Also, the energy gap between valence and conduction bands decreases from 6.4 electron volts at zero pressure to about 1.7 electron volts at 60 gigapascals, transforming cesium iodide from a highly ionic compound to a semiconductor. The structural transition increases the rate at which the band gap closes, and an extrapolation suggests that cesium iodide becomes metallic near (or somewhat above) 100 gigapascals. Similar changes in bonding character are likely to occur in other alkali halides at pressures above 100 gigapascals.
碘化铯在低压下是一种简单的离子盐,在40吉帕斯卡(400千巴)时会发生二级相变,从立方B2(氯化铯型)结构转变为体心四方结构。此外,价带和导带之间的能隙从零压力下的6.4电子伏特降至60吉帕斯卡时的约1.7电子伏特,使碘化铯从一种高度离子性化合物转变为半导体。结构转变增加了带隙关闭的速率,外推表明碘化铯在接近(或略高于)100吉帕斯卡时变为金属。在高于100吉帕斯卡的压力下,其他碱金属卤化物可能会发生类似的键合特性变化。