Lyo I W, Avouris P
Science. 1989 Sep 22;245(4924):1369-71. doi: 10.1126/science.245.4924.1369.
Negative differential resistance (NDR) is the essential property that allows fast switching in certain types of electronic devices. With scanning tunneling microscopy (STM) and scanning tunneling spectroscopy, it is shown that the current-voltage characteristics of a diode configuration consisting of an STM tip over specific sites of a boron-exposed silicon(111) surface exhibit NDR. These NDR-active sites are of atomic dimensions ( approximately 1 nanometer). NDR in this case is the result of tunneling through localized, atomic-like states. Thus, desirable device characteristics can be obtained even on the atomic scale.
负微分电阻（NDR）是某些类型电子设备实现快速开关的关键特性。通过扫描隧道显微镜（STM）和扫描隧道谱表明，由STM针尖位于硼暴露的硅（111）表面特定位置组成的二极管结构的电流-电压特性呈现出负微分电阻。这些具有负微分电阻特性的活性位点具有原子尺寸（约1纳米）。在这种情况下，负微分电阻是通过局域化的类原子态隧穿的结果。因此，即使在原子尺度上也能获得理想的器件特性。
