Eichler A, Weiss M, Oberholzer S, Schönenberger C, Levy Yeyati A, Cuevas J C, Martín-Rodero A
Institut für Physik, Universität Basel, Klingelbergstr. 82, CH-4056 Basel, Switzerland.
Phys Rev Lett. 2007 Sep 21;99(12):126602. doi: 10.1103/PhysRevLett.99.126602. Epub 2007 Sep 19.
We have measured the current (I)-voltage (V) characteristics of a single-wall carbon nanotube quantum dot coupled to superconducting source and drain contacts in the intermediate coupling regime. Whereas the enhanced differential conductance dI/dV due to the Kondo resonance is observed in the normal state, this feature around zero-bias voltage is absent in the superconducting state. Nonetheless, a pronounced even-odd effect appears at finite bias in the dI/dV subgap structure caused by Andreev reflection. The first-order Andreev peak appearing around V=Delta/e is markedly enhanced in gate-voltage regions, in which the charge state of the quantum dot is odd. This enhancement is explained by a "hidden" Kondo resonance, pinned to one contact only. A comparison with a single-impurity Anderson model, which is solved numerically in a slave-boson mean-field approach, yields good agreement with the experiment.
我们测量了处于中间耦合 regime 下与超导源极和漏极接触耦合的单壁碳纳米管量子点的电流(I)-电压(V)特性。在正常状态下观察到由于近藤共振导致的增强的微分电导 dI/dV,而在超导状态下零偏置电压附近的这一特征不存在。尽管如此,在由安德列夫反射引起的 dI/dV 亚能隙结构中,在有限偏置下出现了明显的奇偶效应。在量子点电荷态为奇数的栅极电压区域中,出现在 V = Δ/e 附近的一阶安德列夫峰明显增强。这种增强可以用仅固定在一个接触点上的“隐藏”近藤共振来解释。与通过从玻色子平均场方法数值求解的单杂质安德森模型进行比较,与实验结果吻合良好。