Gu Jiande, Xie Yaoming, Schaefer Henry F
Drug Design & Discovery Center, State Key Laboratory of Drug Research, Shanghai Institute of Materia Medica, Chinese Academy of Sciences, Shanghai 201203, People's Republic of China.
J Chem Phys. 2007 Oct 21;127(15):155107. doi: 10.1063/1.2780148.
To elucidate electron attachment induced damage in the DNA double helix, electron attachment to the 2'-deoxyribonucleoside pair dG:dC has been studied with the reliably calibrated B3LYP/DZP++ theoretical approach. The exploration of the potential energy surface of the neutral and anionic dG:dC pairs predicts a positive electron affinity for dG:dC [0.83 eV for adiabatic electron affinity (EAad) and 0.16 eV for vertical electron affinity (VEA)]. The substantial increases in the electron affinity of dG:dC (by 0.50 eV for EAad and 0.23 eV for VEA) compared to those of the dC nucleoside suggest that electron attachment to DNA double helices should be energetically favored with respect to the single strands. Most importantly, electron attachment to the dC moiety in the dG:dC pair is found to be able to trigger the proton transfer in the dG:dC- pair, surprisingly resulting in the lower energy distonic anionic complex d(G-H)-:d(C+H).. The negative charge for the latter system is located on the base of dC in the dG:dC- pair, while it is transferred to d(G-H) in d(G-H)-:d(C+H)., accompanied by the proton transfer from N1(dG) to N3(dC). The low energy barrier (2.4 kcal/mol) for proton transfer from dG to dC- suggests that the distonic d(G-H)-:d(C+H). pair should be one of the important intermediates in the process of electron attachment to DNA double helices. The formation of the neutral nucleoside radical d(C+H). is predicted to be the direct result of electron attachment to the DNA double helices. Since the neutral radical d(C+H). nucleotide is the key element in the formation of this DNA lesion, electron attachment might be one of the important factors that trigger the formation of abasic sites in DNA double helices.
为了阐明电子附着对DNA双螺旋结构造成的损伤,我们采用经过可靠校准的B3LYP/DZP++理论方法,研究了电子与2'-脱氧核糖核苷对dG:dC的附着情况。对中性和阴离子dG:dC对的势能面进行探索后预测,dG:dC具有正电子亲和力[绝热电子亲和力(EAad)为0.83 eV,垂直电子亲和力(VEA)为0.16 eV]。与dC核苷相比,dG:dC的电子亲和力大幅增加(EAad增加0.50 eV,VEA增加0.23 eV),这表明相对于单链而言,电子附着到DNA双螺旋在能量上更有利。最重要的是,发现电子附着到dG:dC对中的dC部分能够引发dG:dC-对中的质子转移,令人惊讶的是,这会形成能量较低的离域阴离子复合物d(G-H)-:d(C+H).. 后一个体系的负电荷位于dG:dC-对中dC的碱基上,而在d(G-H)-:d(C+H).中则转移到了d(G-H)上,同时伴随着质子从N1(dG)转移到N3(dC)。从dG到dC-的质子转移具有较低的能垒(2.4千卡/摩尔),这表明离域的d(G-H)-:d(C+H).对应该是电子附着到DNA双螺旋过程中的重要中间体之一。预计中性核苷自由基d(C+H).的形成是电子附着到DNA双螺旋的直接结果。由于中性自由基d(C+H).核苷酸是这种DNA损伤形成的关键因素,电子附着可能是触发DNA双螺旋中无碱基位点形成的重要因素之一。