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形成温度和粗糙度对硅表面十八烷基三氯硅烷自组装单分子层表面电位的影响。

Effect of formation temperature and roughness on surface potential of octadecyltrichlorosilane self-assembled monolayer on silicon surfaces.

作者信息

Bush Brian G, DelRio Frank W, Opatkiewicz Justin, Maboudian Roya, Carraro Carlo

机构信息

Department of Chemical Engineering, University of California, Berkeley, California 94720, USA.

出版信息

J Phys Chem A. 2007 Dec 13;111(49):12339-43. doi: 10.1021/jp075392b. Epub 2007 Nov 10.

Abstract

Kelvin probe force microscopy (KPFM) and atomic force microscopy (AFM) are employed to probe the surface potential and topography of octadecyltrichlorosilane [OTS, CH3(CH2)17SiCl3] self-assembled monolayers (SAMs) on oxidized Si(100) and polycrystalline silicon surfaces as a function of deposition temperature and substrate roughness with particular attention paid to the monitoring of SAM adsorption on highly rough surfaces. In these studies, it is found that the surface potential magnitude of the adsorbed layer is larger for monolayers formed in the liquid-condensed (LC) phase than for those formed in the liquid-expanded (LE) phase. Experiments on individual islands in the LC phase show that surface potential and monolayer thickness increase with increasing island size; islands larger than about 1.5 microm reach maximum potential and height values of 48+/-4 mV and 2.7+/-0.1 nm, with respect to the underlying oxidized surface. It is also shown that KPFM is suitable for the study of monolayer adsorption on polycrystalline surfaces, for which preexisting surface texture makes the use of traditional scanning probe techniques for molecular recognition difficult. In these scenarios it is shown that OTS growth occurs preferentially along grain boundaries in fingerlike patterns having a molecular arrangement comparable to that of LC phase islands on atomically smooth silicon. These findings indicate that surface potential measurements provide a highly accurate, local means of probing monolayer morphology on rough surfaces encountered in many applications.

摘要

开尔文探针力显微镜(KPFM)和原子力显微镜(AFM)被用于探测十八烷基三氯硅烷[OTS,CH3(CH2)17SiCl3]自组装单分子层(SAMs)在氧化硅(100)和多晶硅表面的表面电势和形貌,这是沉积温度和衬底粗糙度的函数,特别关注在高度粗糙表面上对SAM吸附的监测。在这些研究中,发现对于在液-凝聚(LC)相形成的单分子层,吸附层的表面电势幅值大于在液-扩展(LE)相形成的单分子层。在LC相中的单个岛状物上进行的实验表明,表面电势和单分子层厚度随岛状物尺寸的增加而增加;相对于下面的氧化表面,大于约1.5微米的岛状物达到最大电势和高度值,分别为48±4毫伏和2.7±0.1纳米。还表明,KPFM适用于研究多晶表面上的单分子层吸附,对于多晶表面,预先存在的表面纹理使得使用传统扫描探针技术进行分子识别变得困难。在这些情况下,表明OTS生长优先沿着晶界以指状图案发生,其分子排列与原子光滑硅上的LC相岛状物的分子排列相当。这些发现表明,表面电势测量提供了一种高度准确的、局部的手段来探测许多应用中遇到的粗糙表面上的单分子层形态。

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