Hosono H, Mizuguchi M, Skuja L, Ogawa T
Materials and Structures Laboratory, Tokyo Institute of Technology, Nagatsuta, Midori-ku, Yokohama 226-8503, Japan.
Opt Lett. 1999 Nov 15;24(22):1549-51. doi: 10.1364/ol.24.001549.
Color-center formation in F-doped, OH-free synthetic SiO(2) glasses by irradiation with F(2) excimer lasers (157 nm) was examined as a function of the F content. The concentration of photoinduced E(') centers was reduced to approximately 1/20 by 1 mol.% F(2) doping and remained almost constant on further doping to 7.3 mol. %. The absorption edge was considerably shifted to a lower wavelength (157.4 nm -->153 nm for a 5-mm-thick sample) by 1-mol. % doping and decreased only slightly on further doping. The intensities of the Raman bands that are due to three- and four-membered ring structures were significantly reduced by 1-mol. % F doping. These results strongly suggest that elimination of strained Si-O-Si bonds by F doping plays a central role in the improvement of radiation resistance of SiO(2) glasses to F(2) laser light.
研究了用F₂准分子激光(157 nm)辐照F掺杂、无OH的合成SiO₂玻璃时色心的形成与F含量的关系。通过1 mol.%的F₂掺杂,光致E'中心的浓度降低到约1/20,进一步掺杂到7.3 mol.%时保持几乎恒定。通过1 mol.%的掺杂,吸收边显著移向更低波长(对于5毫米厚的样品,从157.4 nm变为153 nm),进一步掺杂时仅略有降低。由三元和四元环结构引起的拉曼带强度通过1 mol.%的F掺杂显著降低。这些结果强烈表明,F掺杂消除应变Si - O - Si键在提高SiO₂玻璃对F₂激光的抗辐射性中起核心作用。