Pascarelli S, Ruffoni M P, Trapananti A, Mathon O, Aquilanti G, Ostanin S, Staunton J B, Pettifer R F
European Synchrotron Radiation Facility, 6 rue Jules Horowitz, 38043 Grenoble, France.
Phys Rev Lett. 2007 Dec 7;99(23):237204. doi: 10.1103/PhysRevLett.99.237204. Epub 2007 Dec 6.
Using x-ray absorption spectroscopy, we have studied the effect of pressure on femtometer-scale bond strain due to anisotropic magnetostriction in a thin FeCo film. At 7 GPa local magnetostrictive strain is found to be larger than at ambient, in agreement with spin-polarized ab initio electronic structure calculations, but contrary to the expected effect of compression on bond stiffness. The availability of high pressure data on local magnetostrictive strain opens new capabilities for validating theoretical predictions and can lead to the development of materials with the desired properties.
利用X射线吸收光谱,我们研究了压力对薄铁钴薄膜中各向异性磁致伸缩引起的飞米级键应变的影响。在7吉帕斯卡时,发现局部磁致伸缩应变比常压下更大,这与自旋极化从头算电子结构计算结果一致,但与压缩对键刚度的预期影响相反。局部磁致伸缩应变高压数据的可得性为验证理论预测开辟了新的可能性,并可能导致具有所需性能材料的开发。