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磁性半导体Fe1-xCoxSi合金纳米线的化学合成与磁输运

Chemical synthesis and magnetotransport of magnetic semiconducting Fe1-xCoxSi alloy nanowires.

作者信息

Schmitt Andrew L, Higgins Jeremy M, Jin Song

机构信息

Department of Chemistry, University of Wisconsin-Madison 53706, USA.

出版信息

Nano Lett. 2008 Mar;8(3):810-5. doi: 10.1021/nl072729c. Epub 2008 Feb 1.

Abstract

We report single-crystal nanowires of magnetic semiconducting Fe1-xCoxSi alloys synthesized using a two-component single source precursor approach. Extending our previous syntheses of FeSi and CoSi nanowires from Fe(SiCl3)2(CO)4 and Co(SiCl3)(CO)4 precursors, we found that a homogeneous solution formed upon mixing these two precursors due to melting point suppression. This liquid constitutes the single-source precursor suitable for delivery through chemical vapor deposition, which enables the chemical synthesis of Fe1-xCoxSi alloy nanowires on silicon substrates covered with a thin (1-2 nm) SiO2 layer. Using scanning and transmission electron microscopy and energy dispersive X-ray spectroscopy and mapping, we demonstrate two homogenously mixed alloy nanowire samples with very different Co substitution concentrations (x): 6+/-5%, the ferromagnetic semiconductor regime, and 44+/-5%, the helical magnetic regime. The magnetotransport properties of these alloy nanowires are pronouncedly different from that of the host structures FeSi and CoSi, as well as from one another, and consistent with the physical properties as expected for their corresponding compositions. These novel magnetic semiconducting silicide nanowires will be important building blocks for silicon-based spintronic nanodevices.

摘要

我们报道了采用双组分单源前驱体方法合成的磁性半导体Fe1-xCoxSi合金单晶纳米线。在我们之前从Fe(SiCl3)2(CO)4和Co(SiCl3)(CO)4前驱体合成FeSi和CoSi纳米线的基础上,我们发现将这两种前驱体混合后,由于熔点降低形成了均匀溶液。这种液体构成了适合通过化学气相沉积进行输送的单源前驱体,从而能够在覆盖有薄(1-2纳米)SiO2层的硅衬底上化学合成Fe1-xCoxSi合金纳米线。利用扫描和透射电子显微镜、能量色散X射线光谱和映射技术,我们展示了两种具有非常不同Co替代浓度(x)的均匀混合合金纳米线样品:6±5%,处于铁磁半导体状态;44±5%,处于螺旋磁状态。这些合金纳米线的磁输运性质与主体结构FeSi和CoSi的磁输运性质明显不同,彼此之间也不同,并且与它们相应组成预期的物理性质一致。这些新型磁性半导体硅化物纳米线将成为基于硅的自旋电子纳米器件的重要构建块。

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