具有对红外光高速响应的金属/铁电体/半导体开关二极管的开关瞬态分析

Switching transient analysis of a metal/ferroelectric/semiconductor switch diode with high speed response to infrared light.

作者信息

Chen F Y, Ho J J, Fang Y K, Shu C Y, Hsu C Y, Chen J R, Ju M S

机构信息

Department of Electrical Engineering, National Cheng Kung University, Tainan, Taiwan, R.O.C.

出版信息

IEEE Trans Ultrason Ferroelectr Freq Control. 1999;46(3):502-10. doi: 10.1109/58.764835.

DOI:10.1109/58.764835

PMID:18238450

Abstract

A thin PbTiO(3)-n-p(+) silicon switch diode has been developed, in which the switching voltage (the turned-on voltage) changes in proportion to the infrared light power. The diode has a rapid response time of 0.65 mus compared with other conventional infrared sensors. It is attributed to the rapid switching device structure and the smaller pyroelectric layer thickness, 50 nm. In this paper, we have analyzed the rapid switching transient response by using heat conduction and switching theory successfully. The experimental results are in agreement with the theoretical analysis.

摘要

一种薄的钛酸铅（PbTiO₃）-n-p（+）硅开关二极管已被研制出来，其中开关电压（开启电压）与红外光功率成比例变化。与其他传统红外传感器相比，该二极管具有0.65微秒的快速响应时间。这归因于快速开关器件结构和较小的热释电层厚度，即50纳米。在本文中，我们成功地运用热传导和开关理论分析了快速开关瞬态响应。实验结果与理论分析一致。