有机半导体中磁阻的反转。

Inversion of magnetoresistance in organic semiconductors.

作者信息

Bergeson J D, Prigodin V N, Lincoln D M, Epstein A J

机构信息

Department of Physics, The Ohio State University, Columbus, Ohio 43210-1117, USA.

出版信息

Phys Rev Lett. 2008 Feb 15;100(6):067201. doi: 10.1103/PhysRevLett.100.067201. Epub 2008 Feb 13.

DOI:10.1103/PhysRevLett.100.067201

PMID:18352505

Abstract

We report that organic semiconductors such as alpha-sexithiophene (alpha-6T) have magnetoresistance (MR) with unexpected sign changes; depending on applied voltage, temperature, and layer thickness, the resistance may either increase or decrease upon application of a small magnetic field (<100 mT). We propose that MR and the inversion of MR are due to the role of hyperfine interaction in a magnetic field, as illustrated by the recombination-limited regime.

摘要

我们报道，诸如α-六噻吩（α-6T）之类的有机半导体具有磁电阻（MR），其符号变化出乎意料；取决于施加的电压、温度和层厚度，在施加小磁场（<100 mT）时，电阻可能增加或减小。我们提出，磁电阻及其反转是由于超精细相互作用在磁场中的作用，如在复合限制区域所示。