Lee Jin Seok, Brittman Sarah, Yu Dong, Park Hongkun
Department of Chemistry and Chemical Biology, Harvard University, 12 Oxford Street, Cambridge, Massachusetts 02138, USA.
J Am Chem Soc. 2008 May 14;130(19):6252-8. doi: 10.1021/ja711481b. Epub 2008 Apr 11.
We report the synthesis and characterization of radial heterostructures composed of an antimony telluride (Sb2Te3) core and a germanium telluride (GeTe) shell, as well as an improved synthesis of Sb2Te3 nanowires. The synthesis of the heterostructures employs Au-catalyst-assisted vapor-liquid-solid (VLS) and vapor-solid (VS) mechanisms. Energy-dispersive X-ray spectrometry indicates that Sb and Ge are localized in the Sb2Te3 and GeTe portions, respectively, confirming the alloy-free composition in the core/shell heterostructures. Transmission electron microscopy and diffraction studies show that Sb2Te3 and GeTe regions exhibit rhombohedral crystal structure. Both Sb2Te3 and GeTe grow along the [110] direction with an epitaxial interface between them. Electrical characterization of individual nanowires and nanowire heterostructures demonstrates that these nanostructures exhibit memory-switching behavior.
我们报道了由碲化锑(Sb2Te3)核和碲化锗(GeTe)壳组成的径向异质结构的合成与表征,以及Sb2Te3纳米线的改进合成方法。异质结构的合成采用金催化剂辅助的气液固(VLS)和气固(VS)机制。能量色散X射线光谱表明,Sb和Ge分别位于Sb2Te3和GeTe部分,证实了核/壳异质结构中无合金成分。透射电子显微镜和衍射研究表明,Sb2Te3和GeTe区域呈现菱面体晶体结构。Sb2Te3和GeTe均沿[110]方向生长,它们之间具有外延界面。对单个纳米线和纳米线异质结构的电学表征表明,这些纳米结构表现出记忆开关行为。