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线性CdTe/CdSe/CdTe异质结构纳米棒的结构表征及温度依赖光致发光

Structural characterization and temperature-dependent photoluminescence of linear CdTe/CdSe/CdTe heterostructure nanorods.

作者信息

Saunders Aaron E, Koo Bonil, Wang Xiaoyong, Shih Chih-Kang, Korgel Brian A

机构信息

Department of Chemical & Biological Engineering, The University of Colorado at Boulder, Boulder, CO 80309, USA.

出版信息

Chemphyschem. 2008 Jun 2;9(8):1158-63. doi: 10.1002/cphc.200800008.

Abstract

Linear CdTe|CdSe|CdTe heterostructure nanorods are synthesized by using a colloidal sequential reactant injection technique [Shieh et al., J. Phys. Chem. B 2005, 109, 8538-8542]. The composition profiles of the individual nanorods are verified by using nanobeam elemental mapping by energy dispersive X-ray spectroscopy (EDS) and the photoluminescence emission spectra of the linear CdTe|CdSe|CdTe heterostructure nanorods are measured as a function of the temperature (down to 5 K). Photoluminescence is observed to occur from electron-hole recombination in both the CdSe core and across the heterojunction. Thermally activated trapping is found to influence both luminescence processes, thereby being more significant for the type II recombination across the CdSe|CdTe interface.

摘要

通过使用胶体顺序反应物注入技术[Shieh等人,《物理化学杂志B》2005年,第109卷,8538 - 8542页]合成了线性CdTe|CdSe|CdTe异质结构纳米棒。通过能量色散X射线光谱法(EDS)的纳米束元素映射来验证各个纳米棒的组成分布,并测量线性CdTe|CdSe|CdTe异质结构纳米棒的光致发光发射光谱随温度(低至5 K)的变化。观察到光致发光发生在CdSe核内以及异质结处的电子 - 空穴复合过程中。发现热激活俘获会影响这两种发光过程,因此对于跨越CdSe|CdTe界面的II型复合更为显著。

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