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具有离散二硒化物单元的稀土金属(III)氧化物硒化物M4O4Se[Se2](M = 镧、铈、镨、钕、钐):晶体结构、磁阻挫及其他性质

Rare-earth metal(III) oxide selenides M4O4Se[Se2] (M=La, Ce, Pr, Nd, Sm) with discrete diselenide units: crystal structures, magnetic frustration, and other properties.

作者信息

Strobel Sabine, Choudhury Amitava, Dorhout Peter K, Lipp Christian, Schleid Thomas

机构信息

Institute for Inorganic Chemistry, Universitaet Stuttgart, Stuttgart, Germany.

出版信息

Inorg Chem. 2008 Jun 2;47(11):4936-44. doi: 10.1021/ic800233c. Epub 2008 May 7.

Abstract

The rare-earth metal(III) oxide selenides of the formula La4O4Se[Se2], Ce4O4Se[Se2], Pr4O4Se[Se2], Nd4O4Se[Se2], and Sm4O4Se[Se2] were synthesized from a mixture of the elements with selenium dioxide as the oxygen source at 750 degrees C. Single crystal X-ray diffraction was used to determine their crystal structures. The isostructural compounds M4O4Se[Se2] (M=La, Ce, Pr, Nd, Sm) crystallize in the orthorhombic space group Amm2 with cell dimensions a=857.94(7), b=409.44(4), c=1316.49(8) pm for M=La; a=851.37(6), b=404.82(3), c=1296.83(9) pm for M=Ce; a=849.92(6), b=402.78(3), c=1292.57(9) pm for M=Pr; a=845.68(4), b=398.83(2), c=1282.45(7) pm for M=Nd; and a=840.08(5), b=394.04(3), c=1263.83(6) pm for M=Sm (Z=2). In their crystal structures, Se2- anions as well as [Se-Se]2- dumbbells interconnect {[M4O4]4+} infinity 2 layers. These layers are composed of three crystallographically different, distorted [OM4]10+ tetrahedra, which are linked via four common edges. The compounds exhibit strong Raman active modes at around 215 cm(-1), which can be assigned to the Se-Se stretching vibration. Optical band gaps for La4O4Se[Se2], Ce4O4Se[Se2], Pr4O4Se[Se2], Nd4O4Se[Se2], and Sm4O4Se[Se2] were derived from diffuse reflectance spectra. The energy values at which absorption takes place are typical for semiconducting materials. For the compounds M4O4Se[Se2] (M=La, Pr, Nd, Sm) the fundamental band gaps, caused by transitions from the valence band to the conduction band (VB-CB), lie around 1.9 eV, while for M=Ce an absorption edge occurs at around 1.7 eV, which can be assigned to f-d transitions of Ce3+. Magnetic susceptibility measurements of Ce4O4Se[Se2] and Nd4O4Se[Se2] show Curie-Weiss behavior above 150 K with derived experimental magnetic moments of 2.5 micro B/Ce and 3.7 micro B/Nd and Weiss constants of theta p=-64.9 K and theta p=-27.8 K for the cerium and neodymium compounds, respectively. Down to 1.8 K no long-range magnetic ordering could be detected. Thus, the large negative values for theta p indicate the presence of strong magnetic frustration within the compounds, which is due to the geometric arrangement of the magnetic sublattice in form of [OM4]10+ tetrahedra.

摘要

式为La4O4Se[Se2]、Ce4O4Se[Se2]、Pr4O4Se[Se2]、Nd4O4Se[Se2]和Sm4O4Se[Se2]的稀土金属(III)氧化物硒化物是在750摄氏度下由元素混合物与二氧化硒作为氧源合成的。使用单晶X射线衍射确定它们的晶体结构。同构化合物M4O4Se[Se2](M = La、Ce、Pr、Nd、Sm)在正交空间群Amm2中结晶,对于M = La,晶胞参数a = 857.94(7)、b = 409.44(4)、c = 1316.49(8) pm;对于M = Ce,a = 851.37(6)、b = 404.82(3)、c = 1296.83(9) pm;对于M = Pr,a = 849.92(6)、b = 402.78(3)、c = 1292.57(9) pm;对于M = Nd,a = 845.68(4)、b = 398.83(2)、c = 1282.45(7) pm;对于M = Sm,a = 840.08(5)、b = 394.04(3)、c = 1263.83(6) pm(Z = 2)。在它们的晶体结构中,Se2-阴离子以及[Se - Se]2-哑铃状结构连接{[M4O4]4+}∞2层。这些层由三个晶体学上不同的、扭曲的[OM4]10+四面体组成,它们通过四个公共边相连。这些化合物在215 cm(-1)左右表现出强烈的拉曼活性模式,可归因于Se - Se伸缩振动。La4O4Se[Se2]、Ce4O4Se[Se2]、Pr4O4Se[Se2]、Nd4O4Se[Se2]和Sm4O4Se[Se2]的光学带隙由漫反射光谱得出。吸收发生的能量值是半导体材料的典型值。对于化合物M4O4Se[Se2](M = La、Pr、Nd、Sm),由价带向导带(VB - CB)跃迁引起的基本带隙约为1.9 eV,而对于M = Ce,吸收边出现在约1.7 eV处,可归因于Ce3+的f - d跃迁。Ce4O4Se[Se2]和Nd4O4Se[Se2]的磁化率测量表明,在150 K以上呈现居里 - 外斯行为,铈和钕化合物的实验得出的磁矩分别为2.5 μB/Ce和3.7 μB/Nd,外斯常数分别为θp = -64.9 K和θp = -27.8 K。低至1.8 K时未检测到长程磁有序。因此,θp的大负值表明化合物中存在强磁阻挫,这是由于[OM4]10+四面体形式的磁亚晶格的几何排列所致。

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