Kavetskyy T, Shpotyuk O, Kaban I, Hoyer W
Institute of Materials, Scientific Research Company "Carat," 202 Stryjska Str., Lviv 79031, Ukraine.
J Chem Phys. 2008 Jun 28;128(24):244514. doi: 10.1063/1.2945300.
Atomic structures of Ge(25)Sb(15)S(60) and Ge(35)Sb(5)S(60) glasses are investigated in the gamma-irradiated and annealed after gamma-irradiation states by means of high-energy synchrotron x-ray diffraction technique. The first sharp diffraction peak (FSDP) is detected at around 1.1 A(-1) in the structure factors of both alloys studied. The FSDP position is found to be stable for radiation/annealing treatment of the samples, while the FSDP intensity shows some changes between gamma-irradiated and annealed states. The peaks in the pair distribution functions observed between 2 and 4 A are related to the Ge-S, Ge-Sb, and Sb-Sb first neighbor correlations and Ge-Ge second neighbor correlations in the edge-shared GeS(42) tetrahedra, and S-S and/or Ge-Ge second neighbor correlations in the corner-shared GeS(42) tetrahedra. Three mechanisms of the radiation-/annealing-induced changes are discussed in the framework of coordination topological defect formation and bond-free solid angle concepts.
利用高能同步辐射X射线衍射技术,研究了γ辐照态以及γ辐照后退火态下Ge(25)Sb(15)S(60)和Ge(35)Sb(5)S(60)玻璃的原子结构。在所研究的两种合金的结构因子中,在约1.1 Å⁻¹处检测到第一尖锐衍射峰(FSDP)。发现FSDP位置对于样品的辐射/退火处理是稳定的,而FSDP强度在γ辐照态和退火态之间显示出一些变化。在2至4 Å之间观察到的对分布函数中的峰与边共享GeS₄²四面体中的Ge-S、Ge-Sb和Sb-Sb第一近邻相关性以及Ge-Ge第二近邻相关性有关,并且与角共享GeS₄²四面体中的S-S和/或Ge-Ge第二近邻相关性有关。在配位拓扑缺陷形成和无键立体角概念的框架内讨论了辐射/退火诱导变化的三种机制。