Spector S J, Geis M W, Zhou G-R, Grein M E, Gan F, Popovic M A, Yoon J U, Lennon D M, Ippen E P, Kärtner F Z, Lyszczarz T M
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA 02420, USA.
Opt Express. 2008 Jul 21;16(15):11027-31. doi: 10.1364/oe.16.011027.
A broadband, Mach-Zehnder-interferometer based silicon optical modulator is demonstrated, with an electrical bandwidth of 26 GHz and V(pi)L of 4 V.cm. The design of this modulator does not require epitaxial overgrowth and is therefore simpler to fabricate than previous devices with similar performance.