通过溶液相沉淀法实现功能性金属八乙基卟啉一维纳米线的可控自组装。

Controlled self-assembly of functional metal octaethylporphyrin 1 D nanowires by solution-phase precipitative method.

作者信息

So Man-Ho, Roy V A L, Xu Zong-Xiang, Chui Stephen Sin-Yin, Yuen Mai-Yan, Ho Chi-Ming, Che Chi-Ming

机构信息

Department of Chemistry and the HKU-CAS Joint Laboratory on New Materials, The University of Hong Kong, Pokfulam Road, Hong Kong SAR, China.

出版信息

Chem Asian J. 2008 Nov 13;3(11):1968-78. doi: 10.1002/asia.200800162.

DOI:10.1002/asia.200800162

PMID:18767102

Abstract

Metal octaethylporphyrin M(OEP) (M = Ni, Cu, Zn, Pd, Ag, and Pt) nanowires are fabricated by a simple solution-phase precipitative method. By controlling the composition of solvent mixtures, the diameters and lengths of the nanowires can be varied from 20 to 70 nm and 0.4 to 10 microm, respectively. The Ag(OEP) nanowires have lengths up to 10 microm and diameters of 20-70 nm. For the M(OEP) nanowires, the growth orientation and packing of M(OEP) molecules are examined by powder XRD and SAED measurements, revealing that these M(OEP) nanowires are formed by the self-assembly of M(OEP) molecules through intermolecular pi...pi interactions along the pi...pi stacking axis, and the M(2+) ion plays a key role in the nanowire formation. Using the bottom contact field effect transistor structure and a simple drop-cast method, a single-crystal M(OEP) nanowires-based field effect transistor can be readily prepared with prominent hole transporting behaviour and charge-carrier mobility up to 10(-3)-10(-2) cm(2) V(-1) s(-1) for holes, which are 10 times higher than that of vacuum-deposited M(OEP) organic thin-film transistors (OTFTs).

摘要

金属八乙基卟啉M（OEP）（M = Ni、Cu、Zn、Pd、Ag和Pt）纳米线通过一种简单的溶液相沉淀法制备。通过控制溶剂混合物的组成，纳米线的直径和长度可分别在20至70纳米和0.4至10微米范围内变化。Ag（OEP）纳米线长度可达10微米，直径为20 - 70纳米。对于M（OEP）纳米线，通过粉末XRD和SAED测量研究了M（OEP）分子的生长取向和堆积情况，结果表明这些M（OEP）纳米线是由M（OEP）分子通过沿π…π堆积轴的分子间π…π相互作用自组装形成的，并且M（2 +）离子在纳米线形成中起关键作用。利用底部接触场效应晶体管结构和简单的滴铸法，可以轻松制备基于单晶M（OEP）纳米线的场效应晶体管，其具有显著的空穴传输行为，空穴的载流子迁移率高达10^(-3) - 10^(-2) cm^(2) V^(-1) s^(-1)，比真空沉积的M（OEP）有机薄膜晶体管（OTFT）高10倍。