Xu Ting, Zhao Yanhui, Ma Junxian, Wang Changtao, Cui Jianhua, Du Chunlei, Luo Xiangang
State Key Laboratory of Optical Technologies for Microfabrication, Institute of Optics and Electronics, Chinese Academy of Sciences, PO Box 350, Chengdu 610209, China.
Opt Express. 2008 Sep 1;16(18):13579-84. doi: 10.1364/oe.16.013579.
We present that an interference lithography technique beyond the diffraction limit can be theoretically achieved by positing an anisotropic metamaterial under the conventional lithographic mask. Based on the special dispersion characteristics of the metamaterial, only the enhanced evanescent waves with high spatial frequencies can transmit through the metamaterial and contribute to the lithography process. Rigorous coupled wave analysis shows that with 442nm exposure light, one-dimensional periodical structures with 40nm features can be patterned. This technique provides an alternative method to fabricate large-area nanostructures.
我们提出,通过在传统光刻掩膜下放置一种各向异性超材料,理论上可以实现超越衍射极限的干涉光刻技术。基于超材料的特殊色散特性,只有具有高空间频率的增强倏逝波能够透过超材料并对光刻过程产生作用。严格耦合波分析表明,使用442nm曝光光,可以制作出具有40nm特征尺寸的一维周期性结构。该技术为大面积纳米结构的制造提供了一种替代方法。