Ghorbal Achraf, Grisotto Federico, Laudé Marion, Charlier Julienne, Palacin Serge
CEA-Saclay, DSM/IRAMIS/SPCSI, 91191 Gif-sur-Yvette Cedex, France.
J Colloid Interface Sci. 2008 Dec 15;328(2):308-13. doi: 10.1016/j.jcis.2008.09.033. Epub 2008 Sep 18.
An atomic force microscope was used so as to structure by nanofriction films of polynitrophenylene electrografted on substrates of n-type silicon (100) with the native oxide on the top of the surface. AFM measurements of thin films thickness have been carried out in the electrolytic solution for different applied potentials during the electrografting. This investigation allows (i) to determine the relationship between the applied potential and the final thickness of electrografted polyphenylene films and (ii) to specify how the thin layers grow. XPS analysis confirmed the AFM observations on (i) the effective shaving of the grafted polymer chains under mechanical stress and (ii) the existence of a potential threshold for electrografting a polyphenylene film on silicon oxide surfaces. The presence of a residual film in the rubbed zone was attributed to stronger interactions between the first electrografted layer and the native oxide of silicon (through Si-C or/and Si-O-C bonds) than those insuring the cohesion of the multilayer (C-C and C-N bonds).
使用原子力显微镜通过在表面顶部带有原生氧化物的n型硅(100)衬底上进行电接枝的聚硝基苯撑纳米摩擦膜来构建结构。在电接枝过程中,针对不同的施加电位,在电解液中对薄膜厚度进行了原子力显微镜测量。该研究使得(i)能够确定施加电位与电接枝聚苯撑薄膜最终厚度之间的关系,以及(ii)能够明确薄层的生长方式。X射线光电子能谱分析证实了原子力显微镜的观察结果,即(i)在机械应力下接枝的聚合物链的有效刮擦,以及(ii)在氧化硅表面上电接枝聚苯撑薄膜存在电位阈值。摩擦区域中残留膜的存在归因于第一电接枝层与硅的原生氧化物之间(通过Si-C或/和Si-O-C键)的相互作用比确保多层膜内聚力的相互作用(C-C和C-N键)更强。