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伪装记忆障碍时,错误与欺骗性反应是否可区分?一项功能磁共振成像研究。

Are errors differentiable from deceptive responses when feigning memory impairment? An fMRI study.

作者信息

Lee Tatia M C, Au Ricky K C, Liu Ho-Ling, Ting K H, Huang Chih-Mao, Chan Chetwyn C H

机构信息

Laboratory of Neuropsychology, The University of Hong Kong, K610, Pokfulam Road, Hong Kong SAR, Hong Kong, China.

出版信息

Brain Cogn. 2009 Mar;69(2):406-12. doi: 10.1016/j.bandc.2008.09.002. Epub 2008 Oct 19.

Abstract

Previous neuroimaging studies have suggested that the neural activity associated with truthful recall, with false memory, and with feigned memory impairment are different from one another. Here, we report a functional magnetic resonance imaging (fMRI) study that addressed an important but yet unanswered question: Is the neural activity associated with intentional faked responses and with errors differentiable? Using a word list learning recognition paradigm, the findings of this mixed event-related fMRI study clearly indicated that the brain activity associated with intentional faked responses was different to the activity associated with errors committed unintentionally. For intentional faked responses, significant activation was found in the ventrolateral prefrontal cortex, the posterior cingulate region, and the precuneus. However, no significant activation was observed for unintentional errors. The results suggest that deception, in terms of feigning memory impairment, is not only more cognitively demanding than making unintentional errors but also utilizes different cognitive processes.

摘要

以往的神经影像学研究表明,与真实回忆、虚假记忆以及假装记忆损伤相关的神经活动各不相同。在此,我们报告一项功能磁共振成像(fMRI)研究,该研究解决了一个重要但尚未得到解答的问题:与故意伪造反应和错误相关的神经活动是否可区分?使用单词列表学习识别范式,这项混合事件相关fMRI研究的结果清楚地表明,与故意伪造反应相关的大脑活动不同于与无意犯下的错误相关的活动。对于故意伪造反应,在腹外侧前额叶皮层、后扣带回区域和楔前叶发现了显著激活。然而,对于无意错误未观察到显著激活。结果表明,就假装记忆损伤而言,欺骗不仅比犯无意错误在认知上要求更高,而且还利用了不同的认知过程。

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