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整数量子霍尔体系边缘态中的噪声退相

Noise dephasing in edge states of the integer quantum Hall regime.

作者信息

Roulleau P, Portier F, Roche P, Cavanna A, Faini G, Gennser U, Mailly D

机构信息

CEA Saclay, Service de Physique de l'Etat Condensé, Nanoelectronic Group, F-91191 Gif-sur-Yvette, France.

出版信息

Phys Rev Lett. 2008 Oct 31;101(18):186803. doi: 10.1103/PhysRevLett.101.186803. Epub 2008 Oct 29.

Abstract

An electronic Mach-Zehnder interferometer is used in the integer quantum Hall regime at a filling factor 2 to study the dephasing of the interferences. This is found to be induced by the electrical noise existing in the edge states capacitively coupled to each other. Electrical shot noise created in one channel leads to phase randomization in the other, which destroys the interference pattern. These findings are extended to the dephasing induced by thermal noise instead of shot noise: it explains the underlying mechanism responsible for the finite temperature coherence time tau_{phi}(T) of the edge states at filling factor 2, measured in a recent experiment. Finally, we present here a theory of the dephasing based on Gaussian noise, which is found to be in excellent agreement with our experimental results.

摘要

在填充因子为2的整数量子霍尔区域中,使用电子马赫-曾德尔干涉仪来研究干涉的退相。发现这是由相互电容耦合的边缘态中存在的电噪声引起的。一个通道中产生的电散粒噪声会导致另一个通道中的相位随机化,从而破坏干涉图案。这些发现被扩展到由热噪声而非散粒噪声引起的退相:它解释了最近实验中测量的填充因子为2时边缘态有限温度相干时间τ_φ(T)的潜在机制。最后,我们在此提出一种基于高斯噪声的退相理论,发现它与我们的实验结果非常吻合。

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