Kim Eung-Gun, Brédas Jean-Luc
School of Chemistry and Biochemistry and Center for Organic Photonics and Electronics, Georgia Institute of Technology, Atlanta, Georgia 30332-0400, USA.
J Am Chem Soc. 2008 Dec 17;130(50):16880-9. doi: 10.1021/ja806389b.
Poly(3,4-ethylenedioxythiophene) (PEDOT) is the prototypical conjugated polymer used in the doped state as the hole injection/transport layer in organic (opto)electronic devices. Numerous experimental studies have been successful only in drawing a partial microscopic picture of PEDOT due to its complex morphology, which has also hampered application of theoretical approaches. Using density functional theory methods, combined with refined structural models built upon crystallographic data of PEDOT and other substituted polythiophenes, our work seeks to establish a comprehensive understanding of the electronic and geometric structures of PEDOT, as an isolated chain and in the pristine and doped bulk phases. We find that ethylenedioxy substitution planarizes the polythiophene backbone but the experimentally observed bandgap reduction is caused mainly by a stronger destabilization of the valence band than the conduction band via donor-type substitution. The calculated crystal of pristine PEDOT has a monoclinic lamellar structure consisting of inclined pi-stacks. The impact of interchain interactions on the charge carrier effective masses is greater than that of the ethylenedioxy substitution and leads to the reversal of the relative masses; the electrons are lighter than the holes in the pristine crystal. The small interchain electron effective mass is comparable to the hole effective masses found in high mobility organic crystals. Tosylic acid-doped PEDOT (PEDOT:Tos), which is receiving renewed interest as an anode material to replace indium tin oxide, is calculated to be a two-dimensional-like metal. The PEDOT:Tos crystal is found to have an embedded mirror plane in the tosylate monolayer that is sandwiched between PEDOT stacks, and thus to have twice the size of the unit cell proposed earlier. Doping is seen to remove the intrastack inclination of the PEDOT chains.
聚(3,4 - 乙撑二氧噻吩)(PEDOT)是一种典型的共轭聚合物,在掺杂状态下用作有机(光)电子器件中的空穴注入/传输层。由于其复杂的形态,众多实验研究仅成功描绘了PEDOT的部分微观图像,这也阻碍了理论方法的应用。利用密度泛函理论方法,结合基于PEDOT和其他取代聚噻吩晶体学数据构建的精细结构模型,我们的工作旨在全面理解PEDOT作为孤立链以及在原始和掺杂体相中的电子和几何结构。我们发现乙撑二氧基取代使聚噻吩主链平面化,但实验观察到的带隙减小主要是由于供体型取代对价带的去稳定作用强于导带。计算得到的原始PEDOT晶体具有由倾斜π - 堆积组成的单斜层状结构。链间相互作用对电荷载流子有效质量的影响大于乙撑二氧基取代,并导致相对质量的反转;在原始晶体中电子比空穴轻。链间小的电子有效质量与高迁移率有机晶体中的空穴有效质量相当。作为替代铟锡氧化物的阳极材料而重新受到关注的对甲苯磺酸掺杂的PEDOT(PEDOT:Tos)经计算为二维类金属。发现PEDOT:Tos晶体在夹在PEDOT堆叠之间的甲苯磺酸盐单层中有一个嵌入的镜面,因此其晶胞尺寸是先前提出的两倍。掺杂被认为消除了PEDOT链在堆叠内的倾斜。