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钯催化丙二烯硅锡化反应机理的密度泛函理论研究

Reaction mechanism of palladium-catalyzed silastannation of allenes by density functional theory.

作者信息

Wang Meiyan, Cheng Lin, Hong Bo, Wu Zhijian

机构信息

State Key Laboratory of Rare Earth Resource Utilization, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022, People's Republic of China.

出版信息

J Comput Chem. 2009 Jul 15;30(9):1521-31. doi: 10.1002/jcc.21176.

Abstract

The reaction mechanism of Pd(0)-catalyzed allenes silastannation reaction is investigated by the density functional method B3LYP. The overall reaction mechanism is examined. For the allene insertion step, the Pd-Si bond is preferred over the Pd-Sn bond. The electronic mechanism of the allene insertion into Pd-Si bond to form sigma-vinylpalladium (terminal-insertion) and sigma-allylpalladium (internal-insertion) insertion products is discussed in terms of the electron donation and back-donation. It is found that the electron back-donation is significant for both terminal- and internal-insertion. During allene insertion into Pd-Si bond, internal-insertion is preferred over terminal-insertion. By using methylallene, the regio-selectivity for the monosubstituted allene insertion into Pd-Si and Pd-Sn bond is analyzed.

摘要

采用密度泛函方法B3LYP研究了Pd(0)催化的丙二烯硅锡化反应的反应机理。考察了整个反应机理。对于丙二烯插入步骤,Pd-Si键比Pd-Sn键更受青睐。从电子给予和反馈角度讨论了丙二烯插入Pd-Si键形成σ-乙烯基钯(末端插入)和σ-烯丙基钯(内部插入)插入产物的电子机理。发现电子反馈对末端插入和内部插入都很重要。在丙二烯插入Pd-Si键的过程中,内部插入比末端插入更受青睐。通过使用甲基丙二烯,分析了单取代丙二烯插入Pd-Si键和Pd-Sn键的区域选择性。

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