Jackeli G, Khaliullin G
Max-Planck-Institut für Festkörperforschung, Heisenbergstrasse 1, D-70569 Stuttgart, Germany.
Phys Rev Lett. 2008 Nov 21;101(21):216804. doi: 10.1103/PhysRevLett.101.216804. Epub 2008 Nov 20.
The collective behavior of correlated electrons in the VO2 interface layer of the LaVO(3)/SrTiO(3) heterostructure is studied within a quarter-filled t(2g)-orbital Hubbard model on a square lattice. We argue that the ground state is ferromagnetic, driven by the double-exchange mechanism, and is orbitally and charge ordered due to a confined geometry and electron correlations. The orbital and charge density waves open gaps on the entire Fermi surfaces of all orbitals. The theory explains the observed insulating behavior of the p-type interface between LaVO3 and SrTiO3.
在正方晶格上的四分之一填充 $t_{2g}$ 轨道哈伯德模型中,研究了 $LaVO_3/SrTiO_3$ 异质结构的 $VO_2$ 界面层中关联电子的集体行为。我们认为,基态是铁磁性的,由双交换机制驱动,并且由于受限的几何结构和电子关联而呈现轨道和电荷有序。轨道和电荷密度波在所有轨道的整个费米面上打开能隙。该理论解释了观察到的 $LaVO_3$ 和 $SrTiO_3$ 之间 p 型界面的绝缘行为。