Eustis Susie, Meier Douglas C, Beversluis Michael R, Nikoobakht Babak
Surface and Microanalysis Science Division, National Institute of Standards and Technology, 100 Bureau Drive, Mail Stop 8372, Gaithersburg, Maryland 20899, USA.
ACS Nano. 2008 Feb;2(2):368-76. doi: 10.1021/nn700332r.
ZnO nanowires (NWs) are grown on a bulk copper half-transmission electron microscopy grid by chemical vapor deposition in a high temperature tube furnace. Photoluminescence (PL) microscopy revealed band gap emission at 380 nm and a more intense visible emission around 520 nm due to defect states in these NWs. High-resolution transmission electron microscopy shows that the ZnO NWs are single crystalline with hexagonal structure. Auger electron spectroscopy (AES) and energy dispersive X-ray spectroscopy reveal that copper atoms are present along the length of the NW. AES also found that the surface of the NWs is oxygen rich. The surface concentration of zinc increases moving from the tip toward the base of the NW while the concentration of oxygen decreases. The copper in this system not only remains at the tip of the growing NW but also acts as a dopant along the length of the NW, leading to a decrease in the intensity of the band gap PL of these NWs.
通过在高温管式炉中进行化学气相沉积，在块状铜半透射电子显微镜网格上生长氧化锌纳米线（NWs）。光致发光（PL）显微镜显示，由于这些纳米线中的缺陷态，在380 nm处有带隙发射，在520 nm左右有更强的可见光发射。高分辨率透射电子显微镜表明，氧化锌纳米线为具有六方结构的单晶。俄歇电子能谱（AES）和能量色散X射线能谱表明，铜原子沿纳米线的长度存在。AES还发现纳米线表面富含氧。从纳米线的尖端向基部移动时，锌的表面浓度增加，而氧的浓度降低。该系统中的铜不仅保留在生长的纳米线尖端，还沿纳米线的长度充当掺杂剂，导致这些纳米线的带隙PL强度降低。
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