Temperature-dependent Debye-Waller factors for semiconductors with the wurtzite-type structure.
作者信息
Schowalter M, Rosenauer A, Titantah J T, Lamoen D
机构信息
Institut für Festkörperphysik, Universität Bremen, D 28359 Bremen, Germany.
出版信息
Acta Crystallogr A. 2009 May;65(Pt 3):227-31. doi: 10.1107/S0108767309004966. Epub 2009 Mar 13.
PMID:19349666
Abstract
We computed Debye-Waller factors in the temperature range from 0.1 to 1000 K for AlN, GaN, InN, ZnO and CdO with the wurtzite-type structure. The Debye-Waller factors were derived from phonon densities of states obtained from Hellmann-Feynman forces computed within the density-functional-theory formalism. The temperature dependences of the Debye-Waller factors were fitted and fit parameters are given.
摘要
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