Wang X F, Wu T, Wu G, Chen H, Xie Y L, Ying J J, Yan Y J, Liu R H, Chen X H
Hefei National Laboratory for Physical Science at Microscale and Department of Physics, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China.
Phys Rev Lett. 2009 Mar 20;102(11):117005. doi: 10.1103/PhysRevLett.102.117005.
We report that sizable single crystals of BaFe2As2 have been grown with the self-flux method. Measurements and anisotropy of intrinsic transport and magnetic properties from high-quality single crystal are first presented. The resistivity anisotropy (rho{c}/rho{ab}) is as large as 150 and independent of temperature. In contrast to the susceptibility behavior observed in polycrystalline samples, no Curie-Weiss behavior is observed, and a linear-T dependent susceptibility occurs from the spin-density-wave transition temperature, (T{s}), to 700 K. This result suggests that strong antiferromagnetic correlations are present well above T{s}. A twofold symmetry of susceptibility in the ab plane indicates a stripelike spin structure as observed by neutron scattering. The resistivity minimum is strongly dependent on the magnetic field, suggesting that the upturn of the resistivity at low temperatures should be related to spin fluctuation.
我们报道了采用自熔剂法生长出了尺寸可观的BaFe2As2单晶。首次展示了对高质量单晶的本征输运和磁性能的测量及各向异性。电阻率各向异性（ρc/ρab）高达150且与温度无关。与多晶样品中观察到的磁化率行为不同，未观察到居里 - 外斯行为，并且从自旋密度波转变温度（Ts）到700 K出现了与温度呈线性关系的磁化率。这一结果表明在远高于Ts的温度下存在强反铁磁关联。ab平面内磁化率的二重对称性表明存在如中子散射所观察到的条纹状自旋结构。电阻率最小值强烈依赖于磁场，这表明低温下电阻率的上升应与自旋涨落有关。
Zotero 插件