载流子吸收对基于马赫-曾德尔干涉的硅光开关性能的影响。
Performance influence of carrier absorption to the Mach-Zehnder-interference based silicon optical switches.
作者信息
Zhou Haifeng, Zhao Yong, Wang Wanjun, Yang Jianyi, Wang Minghua, Jiang Xiaoqing
机构信息
Department of Information Science and Electronics Engineering, Zhejiang University, Hangzhou, 310027, China.
出版信息
Opt Express. 2009 Apr 27;17(9):7043-51. doi: 10.1364/oe.17.007043.
The free carrier absorption effect in silicon modulation is a detrimental behavior that can influence the crosstalk of interference-based optical switches. Based on the experimental analysis of a 2x2 p-i-n silicon switch, we give a conservative estimate of the crosstalk ability of Mach-Zehnder optical switches. Experimental result shows that, while using a 1475 microm-long phase shifter, the loss penalty almost reaches 1.45 dB/pi, which deteriorates the most ideal crosstalk to just 30 dB. The possible solutions to overcome this limitation are also discussed at the cost of the other device performance.
硅调制中的自由载流子吸收效应是一种有害行为，会影响基于干涉的光开关的串扰。基于对一个2x2 p-i-n硅开关的实验分析，我们对马赫-曾德尔光开关的串扰能力给出了保守估计。实验结果表明，当使用一个1475微米长的移相器时，损耗代价几乎达到1.45 dB/π，这使得最理想的串扰恶化到仅30 dB。还讨论了以牺牲其他器件性能为代价克服这一限制的可能解决方案。
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