Volkmann Niels
Burnham Institute for Medical Research, La Jolla, California, USA.
Acta Crystallogr D Biol Crystallogr. 2009 Jul;65(Pt 7):679-89. doi: 10.1107/S0907444909012876. Epub 2009 Jun 20.
The fitting of high-resolution structures into low-resolution densities obtained from techniques such as electron microscopy or small-angle X-ray scattering can yield powerful new insights. While several algorithms for achieving optimal fits have recently been developed, relatively little effort has been devoted to developing objective measures for judging the quality of the resulting fits, in particular with regard to the danger of overfitting. Here, a general method is presented for obtaining confidence intervals for atomic coordinates resulting from fitting of atomic resolution domain structures into low-resolution densities using well established statistical tools. It is demonstrated that the resulting confidence intervals are sufficiently accurate to allow meaningful statistical tests and to provide tools for detecting potential overfitting.
将高分辨率结构拟合到通过电子显微镜或小角X射线散射等技术获得的低分辨率密度图中,可以产生强大的新见解。虽然最近已经开发了几种用于实现最佳拟合的算法,但在开发用于判断所得拟合质量的客观度量方面投入的精力相对较少,特别是考虑到过拟合的风险。在此,提出了一种通用方法,使用成熟的统计工具来获得将原子分辨率结构域结构拟合到低分辨率密度图后原子坐标的置信区间。结果表明,所得的置信区间足够准确,能够进行有意义的统计检验,并提供检测潜在过拟合的工具。