Tsai Tsung-Yen, Chen Tsung-Han, Tai Nyan-Hwa, Chang Shih-Chin, Hsu Hui-Chen, Palathinkal Thomas Joseph
Department of Materials Science and Engineering, National Tsing Hua University, 101, Section 2, Kuang-Fu Road, Hsinchu, 30013, Taiwan, Republic of China.
Nanotechnology. 2009 Jul 29;20(30):305303. doi: 10.1088/0957-4484/20/30/305303. Epub 2009 Jul 7.
A new method for the fabrication of periodic CNT arrays was developed in this study, which involves the use of the inverse nano-sphere lithography (INSL) process. Mo of a honeycomb pattern, acting as a catalyst-poisoning layer, was produced by the nano-sphere lithography (NSL) process; the Mo poisoned the catalyst and prevented CNT growth where deposited, and as a result, a periodic CNT pattern was obtained. Using this method, the uniformity of the CNT array can be improved by preventing the negative effect of arrangement defects in self-assembled monolayers. The size and the period of the CNT array can be adjusted by careful selection of the polystyrene (PS) sphere diameter. X-ray photoelectron spectroscope (XPS) analysis revealed that the Co catalyst was ineffective on the areas of Mo deposition due to the diffusion of Co into the Mo layer.
本研究开发了一种制备周期性碳纳米管阵列的新方法,该方法涉及使用反向纳米球光刻(INSL)工艺。通过纳米球光刻(NSL)工艺制备了具有蜂窝图案的钼,作为催化剂中毒层;钼使催化剂中毒并阻止了碳纳米管在沉积处的生长,结果获得了周期性的碳纳米管图案。使用该方法,可以通过防止自组装单层中排列缺陷的负面影响来提高碳纳米管阵列的均匀性。通过仔细选择聚苯乙烯(PS)球的直径,可以调整碳纳米管阵列的尺寸和周期。X射线光电子能谱(XPS)分析表明,由于钴扩散到钼层中,钴催化剂在钼沉积区域无效。