Yun J, Jeong Y, Lee G-H
Materials Processing Division, Korean Institute of Materials Science, 531 Changwondaero, Changwon, Gyeongnam 641-831, Republic of Korea.
Nanotechnology. 2009 Sep 9;20(36):365606. doi: 10.1088/0957-4484/20/36/365606. Epub 2009 Aug 18.
A nanowire growth model assisted by polymer reconstruction was discovered and used to achieve the direct synthesis of amorphous silicon oxide nanowires (SiONWs) on polyethylene terephthalate (PET) substrates at low growth temperatures (no more than 150 degrees C) using plasma-enhanced chemical vapor deposition (PECVD). The reconstructed polymers were generated from the scission and recombination of polymer chains on the surface of PET substrates under active Ar:O(2) plasma in the PECVD process. The highly ordered nanowire arrays exhibited an excellent geometrical configuration that is comparable to that of SiONWs grown on Si substrates at temperatures higher than 1000 degrees C by using conventional vapor deposition methods with various metal catalysts. A promising optical property-strong photoluminescence in the violet-blue spectral range at room temperature-was detected in the nanowires. This might lead to breakthroughs in the fabrication of electronic and optical nanoscale devices on flexible polymer substrates.
发现了一种由聚合物重构辅助的纳米线生长模型，并利用该模型通过等离子体增强化学气相沉积（PECVD）在聚对苯二甲酸乙二醇酯（PET）衬底上，于低生长温度（不超过150摄氏度）下实现了非晶硅氧化物纳米线（SiONWs）的直接合成。重构聚合物是在PECVD过程中，PET衬底表面的聚合物链在活性Ar:O₂等离子体作用下发生断裂和重组而产生的。高度有序的纳米线阵列展现出优异的几何构型，可与通过使用各种金属催化剂的传统气相沉积方法，在高于1000摄氏度的温度下在硅衬底上生长的SiONWs相媲美。在纳米线中检测到了一种有前景的光学特性——室温下在紫蓝色光谱范围内有强烈的光致发光。这可能会在柔性聚合物衬底上制造电子和光学纳米器件方面带来突破。
