Moon S H, Park J, Oh J M, Kim N J, Lee D, Chang S W, Nielsen D, Chuang S L
Department of Physics, Chungnam National University, Daejeon 305-764, Korea.
Opt Express. 2009 Nov 9;17(23):21222-7. doi: 10.1364/OE.17.021222.
Previously demonstrated slow light is still far from applications, particularly due to the limited bandwidth and control speed. Although semiconductor-based slow light has the high bandwidth and sub-nanosecond control speed, slow light was observed only in the absorption regime with attenuation, while fast light observed in the gain regime with amplification. The large power difference in two regimes makes the use of the optical delay impractical. We report novel slow light in the gain regime, with a high power comparable to that of fast light, utilizing the anomalous gain characteristic in a gain-clamped semiconductor optical amplifier. The slow light is tunable to fast light with the current as the only variable. Additional high speed operation, fast delay control, and wide range of operation wavelength make the present approach practical.
先前展示的慢光距离实际应用仍有很大差距,特别是由于带宽有限和控制速度较慢。尽管基于半导体的慢光具有高带宽和亚纳秒控制速度,但慢光仅在有衰减的吸收区域被观测到,而快光则在有放大作用的增益区域被观测到。这两种区域中的功率差异巨大,使得利用光延迟变得不切实际。我们报告了在增益区域中的新型慢光,其具有与快光相当的高功率,利用了增益钳制半导体光放大器中的反常增益特性。这种慢光可以通过改变电流唯一变量调谐为快光。额外的高速运行、快速延迟控制以及宽范围的工作波长使得本方法具有实用性。