J Heyrovsky Institute of Physical Chemistry, Academy of Sciences of the Czech Republic, vvi, Dolejskova 3, CZ-18223 Prague 8, Czech Republic.
ACS Nano. 2010 Jan 26;4(1):459-69. doi: 10.1021/nn900895w.
Double-walled carbon nanotubes sorted by density gradient ultracentrifugation were examined by Raman spectroscopy and by in situ Raman spectroelectrochemistry. The sorted samples had a narrow distribution of diameters of both inner and outer tubes, which enabled a comparison of the behavior of inner metallic tubes and inner semiconducting nanotubes as a function of the applied electrochemical potential. The metallic inner tubes were efficiently doped even though they were protected from electrolyte ions by the outer wall, whereas the doping of semiconducting inner tubes was observed only at high magnitudes of the electrode potential. These results indicate that the doping response of inner tubes is predominantly controlled by inner tube electronic properties. On the other hand, the effect of electronic structure of the outer tube on the behavior of inner tube is weak. Furthermore, the efficiency of the charge transfer from outer to inner wall depends on the doping level. A low doping level corresponds to a high efficiency of the charge-transfer, while a high doping level shows low charge-transfer efficiency.
采用密度梯度超速离心法对双层碳纳米管进行了分离,并通过拉曼光谱和原位拉曼光谱电化学进行了研究。分离后的样品具有内外管直径的窄分布,这使得可以比较作为施加电化学电势函数的内金属管和内半导体纳米管的行为。尽管内金属管受到外壁的保护而免受电解质离子的影响,但它们仍能有效地掺杂,而只有在电极电势的高幅度下才观察到半导体内管的掺杂。这些结果表明,内管的掺杂响应主要由内管的电子特性控制。另一方面,外管电子结构对内管行为的影响较弱。此外,从外壁到内壁的电荷转移效率取决于掺杂水平。低掺杂水平对应于电荷转移的高效率,而高掺杂水平则显示出低电荷转移效率。