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腹侧被盖区损伤可增强大鼠脑内刺激诱导的 Fos 表达。

Lesion of the ventral tegmental area amplifies stimulation-induced Fos expression in the rat brain.

机构信息

Department of Animal Physiology, University of Gdańsk, 24 Kładki St., 80-822 Gdańsk, Poland.

出版信息

Brain Res. 2010 Mar 12;1320:95-105. doi: 10.1016/j.brainres.2010.01.009. Epub 2010 Jan 14.

Abstract

Unilateral lesions of the ventral tegmental area (VTA), the key structure of the mesolimbic system, facilitate behavioral responses induced by electrical stimulation of the VTA in the contralateral hemisphere. In search of the neuronal mechanism behind this phenomenon, Fos expression was used to measure neuronal activation of the target mesolimbic structures in rats subjected to unilateral electrocoagulation and simultaneously to contralateral electrical stimulation of the VTA (L/S group). These were compared to the level of mesolimbic activation after unilateral electrocoagulation of the VTA (L group), unilateral electrical stimulation of the VTA (S group) and bilateral electrode implantation into the VTA in the sham (Sh) group. We found that unilateral stimulation of the VTA alone increased the density of Fos containing neurons in the ipsilateral mesolimbic target structures: nucleus accumbens, lateral septum and amygdala in comparison with the sham group. However, unilateral lesion of the VTA was devoid of effect in non-stimulated (L) rats and it significantly amplified the stimulation-induced Fos-immunoreactivity (L/S vs S group). Stimulation of the VTA performed after contralateral lesion (L/S) evoked strong bilateral induction of Fos expression in the mesolimbic structures involved in motivation and reward (nucleus accumbens and lateral septum) and the processing of the reinforcing properties of olfactory stimuli (anterior cortical amygdaloid nucleus) in parallel with facilitation of behavioral function measured as shortened latency of eating or exploration. Our data suggest that VTA lesion sensitizes mesolimbic system to stimuli by suppressing an inhibitory influence of brain areas afferenting the VTA.

摘要

腹侧被盖区(VTA)的单侧损伤,作为中脑边缘系统的关键结构,有利于对侧半球 VTA 电刺激诱导的行为反应。为了寻找这一现象背后的神经元机制,使用 Fos 表达来测量接受单侧电凝和同时对侧 VTA 电刺激的大鼠目标中脑边缘结构的神经元激活(L/S 组)。将这些与单侧 VTA 电凝(L 组)、单侧 VTA 电刺激(S 组)和假手术(Sh 组)双侧 VTA 电极植入后的中脑边缘激活水平进行比较。我们发现,与假手术组相比,单独刺激 VTA 会增加同侧中脑边缘靶结构(伏隔核、外侧隔核和杏仁核)中含有 Fos 的神经元密度。然而,VTA 的单侧损伤在未受刺激的(L)大鼠中没有效果,并且它显著放大了刺激诱导的 Fos 免疫反应性(L/S 与 S 组)。在对侧损伤(L/S)后进行 VTA 刺激会强烈诱导参与动机和奖励的中脑边缘结构(伏隔核和外侧隔核)和嗅觉刺激强化特性处理的双侧 Fos 表达(前皮质杏仁核),同时促进行为功能,表现为摄食或探索潜伏期缩短。我们的数据表明,VTA 损伤通过抑制传入 VTA 的脑区的抑制性影响,使中脑边缘系统对刺激敏感。

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