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新型 GeSe2-In2Se3-KI 硫卤化物玻璃的光学带隙研究。

Research on optical band gap of the novel GeSe2-In2Se3-KI chalcohalide glasses.

机构信息

Faculty of Information Science and Engineering, Ningbo University, Ningbo, China.

出版信息

Spectrochim Acta A Mol Biomol Spectrosc. 2010 Mar;75(3):1125-9. doi: 10.1016/j.saa.2009.12.070. Epub 2010 Jan 6.

DOI:10.1016/j.saa.2009.12.070
PMID:20079683
Abstract

The glass-forming region of the GeSe(2)-In(2)Se(3)-KI system was reported firstly. The dependence of physical, thermal and optical properties on compositions as formula of (1-x)(0.8GeSe(2)-0.2In(2)Se(3))-xKI (x=0, 0.1, 0.2, 0.3) chalcohalide glasses was investigated. The allowed direct transition and indirect transition, and Urbach energy of samples were calculated according to the classical Tauc equation. The results show that the glass system has good thermal stability and that there is an obvious blue-shift at the visible absorbing cutting-off edge. When the dissolved amount of KI increased from 0 to 30mol%, the direct optical band gap and the indirect optical band gap were in the range from 1.617 to 1.893eV and 1.573 to 1.857eV. With the decrease of the molar refraction the refractive index decreases, optical band gap and metallization criterion increase. The relationship between energy band gap and metallization criterion was analyzed and the optical properties of chalcohalide glasses were summarized.

摘要

首次报道了 GeSe(2)-In(2)Se(3)-KI 体系的玻璃形成区。研究了(1-x)(0.8GeSe(2)-0.2In(2)Se(3))-xKI(x=0、0.1、0.2、0.3)卤化物玻璃的物理、热和光学性能对组成的依赖性。根据经典的 Tauc 方程计算了样品的允许直接跃迁和间接跃迁以及 Urbach 能。结果表明,该玻璃体系具有良好的热稳定性,在可见吸收截止边缘处有明显的蓝移。当 KI 的溶解量从 0 增加到 30mol%时,直接光学带隙和间接光学带隙分别在 1.617 到 1.893eV 和 1.573 到 1.857eV 的范围内。随着摩尔折射度的降低,折射率降低,光学带隙和金属化判据增加。分析了能带隙与金属化判据的关系,总结了卤化物玻璃的光学性质。

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