Key Laboratory of Industrial Ecology and Environmental Engineering, Ministry of Education, China, School of Environmental and Biological Science and Technology, Dalian University of Technology, Dalian 116024, China.
J Hazard Mater. 2010 May 15;177(1-3):914-7. doi: 10.1016/j.jhazmat.2010.01.003. Epub 2010 Jan 11.
The silicon-doped BiVO(4) film was fabricated by modified metalorganic decomposition (MOD) method. XRD analysis indicated that the crystal size of the BiVO(4) film was decreased from 32.4nm to 23.9nm by doping Si. The measurements of FT-IR spectra and the water contact angle showed that doping Si could elevate the surface hydrophilicity of the BiVO(4) film. The phenol elimination rate on the Si-doped BiVO(4) film electrode in the photoelectrocatalytic process was 1.84 times as great as that on the BiVO(4) film electrode. The enhanced photoelectrocatalytic performance was attributed to the decrease of the crystalline size and the enhancement of the hydrophilic performance.
掺硅 BiVO(4) 薄膜通过改进的金属有机分解（MOD）法制备。XRD 分析表明，掺杂 Si 使 BiVO(4) 薄膜的晶粒尺寸从 32.4nm 减小到 23.9nm。FT-IR 光谱的测量和水接触角表明，掺杂 Si 可以提高 BiVO(4) 薄膜的表面亲水性。在光电催化过程中，Si 掺杂 BiVO(4) 薄膜电极上苯酚的去除率是 BiVO(4) 薄膜电极的 1.84 倍。增强的光电催化性能归因于晶粒尺寸的减小和亲水性的提高。
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