Key Laboratory for Physical Electronics and Devices of the Ministry of Education, Department of Electronic Science and Technology, Xi'an Jiaotong University, Xi'an 710049, People's Republic of China.
Micron. 2010 Jul;41(5):416-22. doi: 10.1016/j.micron.2010.02.010. Epub 2010 Feb 26.
We report on the surface potential characteristics in the equilibrium state of the grounded insulating thin films of several 100 nm thickness negatively charged by a low-energy (<5 keV) focused electron beam, which have been simulated with a newly developed two-dimensional self-consistent model incorporating electron scattering, charge transport and charge trapping. The obtained space charge is positive and negative within and outside the region, respectively, where the electron and hole densities are greater than the trap density. Thus, the surface potential is relatively high around the center, then it decreases to a maximum negative value and finally tends to zero along the radial direction. The position of the maximum value is far beyond the range of e-beam irradiation as a consequence of electron scattering and charge transport. Moreover, a positive electric field can be generated near the surface in both radial and axial directions. The surface potential at center exhibits a maximum negative value in the condition of the approximately 2 keV energy non-penetrating e-beam in this work, which is supported by some existing experimental data in scanning electron microscopy. Furthermore, the surface potential decreases with the increase in beam current, trap density and film thickness, but with the decrease in electron mobility.
我们报告了在低能(<5keV)聚焦电子束负充电的数百纳米厚的接地绝缘薄膜的平衡状态下的表面电势特性,该特性已通过新开发的二维自洽模型进行了模拟,该模型结合了电子散射、电荷输运和电荷俘获。所获得的空间电荷在电子和空穴密度大于陷阱密度的区域内分别为正和负。因此,表面电势在中心周围相对较高,然后沿径向方向降低到最大值负,最后趋于零。由于电子散射和电荷输运,最大值的位置远远超出了电子束照射的范围。此外,在径向和轴向方向上,表面附近可以产生正电场。在本工作中,能量约为 2keV 的非穿透电子束的情况下,中心处的表面电势呈现出最大负值,这得到了扫描电子显微镜中一些现有实验数据的支持。此外,表面电势随着束流、陷阱密度和薄膜厚度的增加而减小,但随着电子迁移率的增加而减小。