在丙二醇单甲醚醋酸酯介电表面上，聚（4-乙烯基联苯）与6,13-双（三异丙基硅乙炔基）并五苯共混的有机薄膜晶体管。

Organic thin film transistor with poly(4-vinylbiphenyl) blended 6,13-bis(triisopropylsilylethynyl)pentacene on propyleneglycolmonomethyletheracetate dielectric surface.

作者信息

Kwon Jae-Hong, Shin Sang-Il, Choi Jinnil, Chung Myung-Ho, Oh Tae-Yeon, Kim Kyung-Hwan, Choi Dong Hoon, Ju Byeong-Kwon

机构信息

Display and Nanosystem Laboratory, College of Engineering, Korea University, Anam-dong, Seongbuk-Gu, Seoul 136-713, Republic of Korea.

出版信息

J Nanosci Nanotechnol. 2010 May;10(5):3198-202. doi: 10.1166/jnn.2010.2244.

DOI:10.1166/jnn.2010.2244

PMID:20358921

Abstract

This paper presents the latest results in the use of soluble materials, such as organic semiconductors (OSCs) and gate-dielectrics, for simplified processing of organic thin film transistors (OTFTs). In this work, the fabrication of a solution-processed OTFT, with 6,13-bis(triisopropylsilylethynyl)pentacene (TIPS-pentacene) and TIPS-pentacene mixed with poly(4-vinylbiphenyl) (PVBP) as the OSC, and propyleneglycolmonomethyletheracetate (PGMEA) as the gate-dielectric, is described. From electrical measurements, we observed exemplary I-V characteristics for these TFTs. Device performance characteristics have been obtained, including the charge carrier mobility (micro) of 1.47 x 10(-2) cm2Ns, threshold voltage (V(T)) of -11.36 V, current on/off ratio (I(ON/OFF)) of 1.08 x 10(4), sub-threshold swing (SS) of 2.13 V/decade for an OTFT with PVBP blended TIPS-pentacene and micro of 1.39 x 10(-4) cm2/Vs, V(T) of 0.7 V, I(ON/OFF) of 1.64 x 10(3), SS of 4.21 V/decade for an OTFT without polymer binder, individually.

摘要

本文介绍了使用可溶性材料（如有机半导体（OSC）和栅极电介质）简化有机薄膜晶体管（OTFT）加工的最新成果。在这项工作中，描述了一种溶液处理的OTFT的制造方法，该OTFT以6,13-双（三异丙基硅乙炔基）并五苯（TIPS-并五苯）以及TIPS-并五苯与聚（4-乙烯基联苯）（PVBP）的混合物作为OSC，以丙二醇单甲醚醋酸酯（PGMEA）作为栅极电介质。通过电学测量，我们观察到了这些TFT典型的I-V特性。已经获得了器件性能特性，包括对于含有PVBP混合TIPS-并五苯的OTFT，电荷载流子迁移率（μ）为1.47×10⁻² cm²/（V·s），阈值电压（V(T)）为 -11.36 V，电流开/关比（I(ON/OFF)）为1.08×10⁴，亚阈值摆幅（SS）为2.13 V/十倍频程；对于不含聚合物粘合剂的OTFT，μ为1.39×10⁻⁴ cm²/（V·s），V(T)为0.7 V，I(ON/OFF)为1.64×10³，SS为4.21 V/十倍频程。